Invited paper: Improved amorphous In-Ga-Zn-O TFTs

Digest of Technical Papers - SID International Symposium

Volumn 39, Issue 2, 2008, Pages 621-624

  Hayashi, Ryo ^a   Sato, Ayumu ^a   Ofuji, Masato ^a   Abe, Katsumi ^a   Yabuta, Hisato ^a   Sano, Masafumi ^a   Kumomi, Hideya ^a   Nomura, Kenji ^b   Kamiya, Toshio ^b,c   Hirano, Masahiro ^b,c   Hosono, Hideo ^b,c  

^a CANON INC   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILM CIRCUITS; ZINC COMPOUNDS;

AMORPHOUSINGAZNO (A-IGZO); BARRIER LAYERS; CIRCUIT OPERATION; ENVIRONMENTAL STABILITY; HYDROGEN SOURCES; IN-GA-ZN-O; SOURCE AND DRAINS; THIN-FILM TRANSISTOR (TFTS);

THIN FILM TRANSISTORS;

EID: 54549085532     PISSN: 0097966X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1889/1.3069739     Document Type: Conference Paper

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