Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides

Journal of Non-Crystalline Solids

Volumn 203, Issue , 1996, Pages 334-344

  Hosono, Hideo ^a,b   Yasukawa, Masahiro ^a   Kawazoe, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INSTITUTE FOR MOLECULAR SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CARRIER CONCENTRATION; COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HEAVY METAL COMPOUNDS; ION IMPLANTATION; OXIDES; TRANSPARENCY;

HALL MOBILITY; HEAVY METAL CATIONS (HMCS); OXYGEN VACANCIES; WIDE GAP OXIDE SEMICONDUCTORS;

SEMICONDUCTOR MATERIALS;

EID: 0030206894     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00367-5     Document Type: Article

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