Experimental and theoretical analysis of degradation in Ga 2O3-In2O3-ZnO thin-film transistors

Japanese Journal of Applied Physics

Volumn 48, Issue 4 PART 2, 2009, Pages

  Fujii, Mami ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Jung, Ji Sim ^b   Kwon, Jang Yeon ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION MECHANISM; DENSITY OF STATE; DEVICE SIMULATIONS; DRAIN VOLTAGE; DRIVING CIRCUITS; GATE VOLTAGES; THRESHOLD VOLTAGE SHIFTS; TRANSFER CURVES; TRAP DENSITY; TRAP LEVELS; UNDER GATE; ZNO;

DRAIN CURRENT; GALLIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ZINC OXIDE;

DEGRADATION;

EID: 77952510389     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.04C091     Document Type: Article

References (20)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Nature 432 (2004) 488.
2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono: Science 300 (2003) 1269.
3. F. M. Hosain, J. Nishi, S. Takagi, T. Sugihara, A. Ohtomo, T. Fukumura, H. Koinuma, H. Ohno, and M. Kawasaki: Physica E 21 (2004) 911.
4. T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, T. Hokari, and M. Yoshida: SID Int. Symp. Dig. Tech. Pap. 37 (2006) 18.
5. R. B. M. Cross and M. M. De Souza: Appl. Phys. Lett. 89 (2006) 263513.
6. P. Gorrn, P. Holzer, T. Riedi, and W. Kowalsky: Appl. Phys. Lett. 90 (2007) 063502.
7. C. S. Hwang, S. K. Park, J. I. Lee, S. M. Chung, Y. S. Yang, L. M. Do, and H. Y. Chu: SID Int. Symp. Dig. Tech. Pap. 38 (2007) 237.
8. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi: Jpn. J. Appl. Phys. 39 (2000) L1209.
9. S. Hashimoto, Y. Uraoka, T. Fuyuki, and Y. Morita: Jpn. J. Appl. Phys. 46 (2007) 1387.
10. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, J. W. Kim, Y. G. Lee, S. Y. Lee, and J. M. Kim: ITC'08 Dig., 2008, p. 299.
11. M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon: Jpn. J. Appl. Phys. 47 (2008) 6236.
12. A. M. Kemp, M. Meunier, and C. G. Tannous: Solid-State Electron. 32 (1989) 149.
13. M. Hack, J. G. Chaw, P. G. Lecomber, and M. Willums: Jpn. J. Appl. Phys. 29 (1990) 2360.
14. ATRAS Device Simulation Software User's Manual (Silvaco, Santa Clara, CA, 2003) Vol.II, p. 13-22
15. T. Kamiya, H. Hiramatsu, K. Nomura, and H. Hosono: J. Electroceram. 17 (2006) 267.
16. T. C. Fung, C. S. Chuang, C. Chen, K. Abe, H. Kumomi, and J. Kanicki: AM-FPD '08, Dig. Tech. Pap., 2008, p. 251.
17. H. Tango, T. Satoh, and Y. Imai: Electron. Lett. 38 (2002) 1227.
18. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi: Jpn. J. Appl. Phys. 39 (2000) L1209.
19. A. R. Merticaru and A. J. Mouthaan: Thin Solid Films 383 (2001) 122.
20. M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hideo: Appl. Phys. Lett. 92 (2008) 133512.