Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature

Journal of Alloys and Compounds

Volumn 691, Issue , 2017, Pages 504-513

  Gao, J ^a,b   He, G ^a   Liu, M ^c   Lv, J G ^d   Sun, Z Q ^a   Zheng, C Y ^a   Jin, P ^a   Xiao, D Q ^a   Chen, X S ^e  

^a ANHUI UNIVERSITY   (China)

^b ANHUI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c INSTITUTE OF SOLID STATE PHYSICS   (China)

^d HEFEI NORMAL UNIVERSITY   (China)

^e SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Atomic layer deposition; Band alignment; Electrical properties; High k dielectric; Interface thermal stability; Leakage current mechanism

Indexed keywords

ANNEALING; CHEMICAL BONDS; DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ENERGY GAP; HETEROJUNCTIONS; HIGH-K DIELECTRIC; INTERFACE STATES; INTERFACES (MATERIALS); LOGIC GATES; PHOTOELECTRON SPECTROSCOPY; RAPID THERMAL ANNEALING; RECONFIGURABLE HARDWARE; SILICATES; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND ALIGNMENTS; CURRENT CONDUCTION MECHANISMS; ELECTRICAL MEASUREMENT; LEAKAGE CURRENT MECHANISMS; POST DEPOSITION ANNEALING; SPACE CHARGE LIMITED CONDUCTION; TRANSMISSION SPECTROSCOPY; X RAY PHOTOEMISSION SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84985945049     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2016.08.289     Document Type: Article

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