Graded tunnelling barrier and oxygen concentration in thermally grown ultrathin SiOx gate oxide

Journal of Physics D: Applied Physics

Volumn 40, Issue 7, 2007, Pages 2143-2149

  Gitlin, Daniel ^a   Karp, James ^a   Moyzhes, Boris ^b  

^a XILINX INC   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GATES (TRANSISTOR); MATHEMATICAL MODELS; SILICA; SUBSTRATES; TUNNEL DIODES;

GRADED BARRIER MODELS; SUBSTRATE INTERFACES; TUNNELLING CURRENTS; ULTRATHIN GATE OXIDES;

SEMICONDUCTOR GROWTH;

EID: 33947367898     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/7/043     Document Type: Article

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