Studies on Al2O3/ZrO2/Al2O 3 high K gate dielectrics applied in a fully depleted SOI MOSFET

Metals and Materials International

Volumn 10, Issue 5, 2004, Pages 475-478

  Lin, Chenglu ^a   Zhang, Ninglin ^a   Shen, Qinwo ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

High K gate dielectrics; MOS capacitors capacitance voltage characteristics; Silicon on insulator

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ANNEALING; CAPACITANCE; CHARGE CARRIERS; DIELECTRIC DEVICES; ELECTRIC RESISTANCE; FINITE DIFFERENCE METHOD; GATE DIELECTRICS; HIGH-K DIELECTRIC; MOS CAPACITORS; MOSFET DEVICES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM EVAPORATION; ZIRCONIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTIC; DETERMINANT FACTORS; ELECTRON BEAM EVAPORATION; FULLY DEPLETED SOI MOSFET; HIGH FREQUENCY CAPACITANCE; HIGH FREQUENCY CHARACTERISTICS; HIGH- K GATE DIELECTRICS; LAYERED STRUCTURES;

SILICON ON INSULATOR TECHNOLOGY;

EID: 11144304032     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF03027351     Document Type: Article

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