Effects of oxygen partial pressure on structural and electrical characteristics of HfAlO high-k gate dielectric grown on strained SiGe by pulsed-laser deposition

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 940-944

  Curreem, K K S ^a   Lee, P F ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

HfAlO; High k dielectric; SiGe

Indexed keywords

ELECTRIC PROPERTIES; INTERFACES (MATERIALS); MICROSTRUCTURE; PULSED LASER DEPOSITION; SILICON; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

HFALO; HIGH-K DIELECTRICS; OXYGEN PARTIAL PRESSURES; SIGE;

DIELECTRIC MATERIALS;

EID: 33846090274     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.040     Document Type: Article

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