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Volumn 104, Issue 6, 2008, Pages

Effects of annealing on the valence band offsets between hafnium aluminate and silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 54749085062     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2982085     Document Type: Article
Times cited : (25)

References (33)
  • 3
    • 41149111980 scopus 로고    scopus 로고
    • Digest of Technical Papers, Proceedings of the 2006 Symposium on Very Large Scale Integration (VLSI) Technology (IEEE, New York),.
    • M. Kadoshima, A. Ogawa, H. Ota, M. Ikeda, M. Takahashi, H. Satake, T. Nabatame, and A. Toriumi, Digest of Technical Papers, Proceedings of the 2006 Symposium on Very Large Scale Integration (VLSI) Technology (IEEE, New York, 2006), p. 180.
    • (2006) , pp. 180
    • Kadoshima, M.1    Ogawa, A.2    Ota, H.3    Ikeda, M.4    Takahashi, M.5    Satake, H.6    Nabatame, T.7    Toriumi, A.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.