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Journal of the Electrochemical Society

Volumn 157, Issue 11, 2010, Pages

The interfacial quality of HfO2 on silicon with different thicknesses of the chemical oxide interfacial layer

(3) Li, Shibin a Han, Lei a Chen, Zhi a

a UNIVERSITY OF KENTUCKY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; CHEMICAL OXIDE; ELLIPSOMETRY MEASUREMENTS; GATE OXIDE; HIGH QUALITY; INTERFACIAL LAYER; INTERFACIAL QUALITIES; METAL GATE; METAL-OXIDE- SEMICONDUCTORCAPACITORS; MOS STRUCTURE; OXIDE THICKNESS; THICKNESS VARIATION;

ATOMIC LAYER DEPOSITION; MOS CAPACITORS; SEMICONDUCTOR GROWTH;

HAFNIUM COMPOUNDS;

EID: 77957712125 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3483789 Document Type: Article

Times cited : (19)

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