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Applied Physics Letters

Volumn 93, Issue 21, 2008, Pages

Control of oxidation and reduction reactions at HfSiOSi interfaces through N exposure or incorporation

(8) Kamada, H a Tanimura, T a Toyoda, S a,b Kumigashira, H a,b Oshima, M a,b Liu, G L c Liu, Z c Ikeda, K c

a UNIVERSITY OF TOKYO (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c SEMICONDUCTOR TECHNOLOGY ACADEMIC RESEARCH CENTER (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION SPECTROSCOPY; HAFNIUM COMPOUNDS; OXIDATION; SILICON; SYNCHROTRON RADIATION;

ANNEALING PROCESSES; EQUIVALENT THICKNESSES; GATE STACK STRUCTURES; HFSION FILMS; NITROGEN ATOMS; OXIDATION AND REDUCTIONS; PHOTOEMISSION SPECTROSCOPIES; REDUCTION REACTIONS;

CHEMICAL OXYGEN DEMAND;

EID: 57049176499 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3036894 Document Type: Article

Times cited : (21)

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