Properties of HfAlO film deposited by plasma enhanced atomic layer deposition

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 307, Issue , 2013, Pages 463-467

  Cao, Duo ^a   Cheng, Xinhong ^a   Jia, Tingting ^a   Zheng, Li ^a   Xu, Dawei ^a   Wang, Zhongjian ^a   Xia, Chao ^a   Yu, Yuehui ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

HfAlO film; Interface state density; Leakage current mechanism; Microstructure; PEALD

Indexed keywords

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; DEPOSITION; ELECTRIC FIELDS; HAFNIUM OXIDES; INTERFACE STATES; MICROSTRUCTURE; PHOTOELECTRON SPECTROSCOPY; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

DENSITY OF INTERFACE STATE; ELECTRICAL PERFORMANCE; INTERFACE STATE DENSITY; LEAKAGE CURRENT MECHANISMS; MICROSTRUCTURE ANALYSIS; PEALD; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RAPID THERMAL ANNEALING (RTA);

INTERFACES (MATERIALS);

EID: 84885183675     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2012.12.102     Document Type: Article

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