Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate

Thin Solid Films

Volumn 562, Issue , 2014, Pages 674-679

  Qiu, X Y ^a   Zhou, G D ^a   Li, J ^a   Chen, Y ^b   Wang, X H ^b   Dai, J Y ^b  

^a SOUTHWEST UNIVERSITY   (China)

^b HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Floating gate memory; Nanocrystals; Silver; Tunneling mechanism

Indexed keywords

CAPACITORS; GERMANIUM; NANOCRYSTALS; SILICON; SUBSTRATES;

AG NANOCRYSTALS; CAPACITANCE-VOLTAGE CURVE; CHARGE STORAGE; FLOATING GATE MEMORY; MEMORY PROPERTIES; NANOFLOATING GATE MEMORY; RADIO-FREQUENCY-MAGNETRON SPUTTERING; TUNNELING MECHANISM;

SILVER;

EID: 84901801250     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.03.086     Document Type: Article

References (36)

1. S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan Volatile and non-volatile memories in silicon with nano-crystal storage Electron Devices Meeting, EDM '95., International 1995 521
2. 2 film using low-energy ion implantation Appl. Phys. Lett. 71 1997 3652
3. 2 layers formed via low energy ion implantation J. Appl. Phys. 84 1998 1316
4. 2 layers by low-energy ion implantation Appl. Phys. Lett. 73 1998 1071
5. 2 interfacial layer between double-stacked Ag nanocrystal for nonvolatile memory device applications J. Appl. Phys. 101 2007 026109
6. H. Jung, H.K. Gun, Y.R. Choi, M.K. Kang, D.L. Kim, and H.J. Kim Nonvolatile memory characteristics of solution-processed oxide thin-film transistors using Ag nanoparticles Thin Solid Films 519 2011 5771
7. K.C. Chan, P.F. Lee, and J.Y. Dai Single electron tunneling and Coulomb blockade effect in HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory structure Appl. Phys. Lett. 92 2008 143117
8. C. Chiu, C.K. Lin, C.W. Lin, and C.S. Lai Investigation of surface pretreatments on GaAs and memory characteristics of MOS capacitors embedded with Au nano-particles Microelectron. Reliab. 52 2012 2592
9. L.W. Feng, C.Y. Chang, T.C. Chang, C.H. Tu, P.S. Wang, Y.F. Chang, M.C. Chen, and H.C. Huang Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications Appl. Phys. Lett. 95 2009 262110
10. 2 as blocking oxide Appl. Phys. Lett. 90 2007 132102
11. N. Zhan, M. Olmedo, G.P. Wang, and J.L. Liu Graphene based nickel nanocrystal flash memory Appl. Phys. Lett. 99 2011 113112
12. R.C. Jeff Jr., M. Yun, B. Ramalingam, B. Lee, V. Misra, G. Triplett, and S. Gangopadhyay Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory Appl. Phys. Lett. 99 2011 072104
13. S. Kim, K. Cho, K. Kwak, and S. Kim Memory Characteristics of Pt nanoparticle-embedded MOS capacitors fabricated at room temperature Trans. Electr. Electron. Mater. 13 2012 162
14. G.H. Lee, J.M. Lee, Y.H. Song, J.C. Bea, T. Tanaka, and M. Koyanag Multilevel charge storage in a multiple alloy nanodot memory Jpn. J. Appl. Phys. 50 2011 095001
15. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E.F. Crabbe, and K. Chan A silicon nanocrystals based memory Appl. Phys. Lett. 68 1996 1377
16. Y.F. Huang, S. Wagner, and J.C. Sturm Nonvolatile amorphous-silicon thin-film-transistor memory structure for drain-voltage independent saturation current Trans. Electron. Dev. 58 2011 2924
17. Li, and J. Liu Nonvolatile memory with Ge/Si heteronanocrystals as floating gate Trans. Electron. Dev. 10 2011 284
18. G. Chakraborty, A. Sengupta, F.G. Requejo, and C.K. Sarkar Study of the relative performance of silicon and germanium nanoparticles embedded gate oxide in metal-oxide-semiconductor memory devices J. Appl. Phys. 109 2011 064504
19. W.L. Liu, P.F. Lee, J.Y. Dai, J. Wang, H.L.W. Chan, C.L. Choy, Z.T. Song, and S.L. Feng Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory Appl. Phys. Lett. 86 2005 013110
20. Das, S. Manna, R. Singha, A. Anopchenko, N. Daldosso, L. Pavesi, A. Dhar, and S.K. Ray Light emission and floating gate memory characteristics of germanium nanocrystals Phys. Status Solidi A 208 2011 635
21. 2 matrix J. Nanopart. Res. 14 2012 930
22. x films prepared by pulsed-laser deposition in oxygen-deficient ambient Appl. Phys. Lett. 88 2006 072906
23. X.Y. Qiu, F. Gao, H.W. Liu, J.S. Zhu, and J.M. Liu Phase separation enhanced interfacial reactions in complex high-k dielectric films Integr. Ferroelectr. 86 2006 13
24. 17/Si substrate (in Chinese) Sci. Sin.-Phys. Mech. Astron. 42 2012 1338
25. 17 grown by RF magnetron sputtering Microelectron. Eng. 86 2009 2247
26. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, and A. Lochtefeld Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 97 2005 011101
27. P. Prieto, V. Nistor, K. Nouneh, M. Oyama, M.A. Lefdil, and R. Díaz XPS study of silver, nickel and bimetallic silver-nickel nanoparticles prepared by seed-mediated growth Appl. Surf. Sci. 258 2012 8807
28. K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskelä Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors Thin Solid Films 416 2002 72
29. J. Weber, and M.I. Alonso Near-band-gap photoluminescence of Si-Ge alloys Phys. Rev. B 40 1989 5683
30. N.H. Nan, W.L. Cai, S.Z. Tang, and H. Chun Direct tunneling and storage of electrons in Ni nanocrystals embedded within MOS structure Rare Met. Mater. Eng. 41 2012 1
31. N. Van, H.N. Hong, R. Jayapal, J. Juyeon, J. Kyungsoo, B. Kyunghyun, A.D. Vinh, and Y. Junsin Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer Appl. Phys. Lett. 100 2012 143502
32. 3 high-k gate dielectric layer Semicond. Sci. Technol. 26 2011 025015
33. P.R. Emtage, and W. Tantraporn Schottky emission through thin insulating films Phys. Rev. Lett. 8 1962 267
34. Y.L. Chioua, J.P. Gambinob, and M. Mohammada Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot Solid State Electron. 45 2001 1787
35. M.E. Levinshtein, S.L. Rumyantsev, and M. Shur Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe 2001 John Wiley & Sons, Inc. New York
36. P. Rottländer, M. Hehn, and A. Schuhl Determining the interfacial barrier height and its relation to tunnel magnetoresistance Phys. Rev. B 65 2002 054422