Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Liu, W L ^a,b   Lee, P F ^a   Dai, J Y ^a   Wang, J ^a   Chan, H L W ^a   Choy, C L ^a   Song, Z T ^b   Feng, S L ^b  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

^b Shanghai Inst of Microsystem and Information System   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; FABRICATION; GERMANIUM; HAFNIUM COMPOUNDS; HYSTERESIS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY;

FLOATING GATE MEMORY; LOW-POWER CONSUMING MEMORY; MEMORY EFFECTS; SOFT ERRORS;

NANOSTRUCTURED MATERIALS;

EID: 19744383710     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1846154     Document Type: Article

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