Photoconductivity of Hf-based binary metal oxide systems

Journal of Applied Physics

Volumn 104, Issue 11, 2008, Pages

  Shamuilia, S ^a   Afanas'Ev, V V ^a   Stesmans, A ^a   McCarthy, I ^b   Campbell, S A ^b   Boutchich, M ^c   Roeckerath, M ^d   Heeg, T ^d   Lopes, J M J ^d   Schubert, J ^d  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b UNIVERSITY OF MINNESOTA   (United States)

^c NXP TSMC Research Center   (Belgium)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CERIUM; CERIUM COMPOUNDS; ELECTRONIC STRUCTURE; ENERGY GAP; HAFNIUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; OZONE WATER TREATMENT; PHASE MODULATION; PHASE SEPARATION; PHOTOCONDUCTIVITY; PHOTOELECTRICITY; PHOTOREFRACTIVE MATERIALS; POSITIVE IONS; SEPARATION; SILICON; SYSTEMS (METALLURGICAL); TRACE ELEMENTS;

AL OXIDES; BANDGAP; BANDGAP ENGINEERINGS; BANDGAP VALUES; BANDGAP WIDTHS; BINARY METAL OXIDES; BINARY SYSTEMS; ENERGY WIDTHS; METAL OXIDES; OXIDE LAYERS; SI CONCENTRATIONS; SI OXIDES; SUB NETWORKS; THIN LAYERS;

ELECTRIC CONDUCTIVITY;

EID: 58149215570     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3020520     Document Type: Article

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