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Applied Physics Letters

Volumn 96, Issue 4, 2010, Pages

Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H-SiC

(4) Suri, Rahul a Kirkpatrick, Casey J a Lichtenwalner, Daniel J a Misra, Veena a

a North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BREAKDOWN FIELD; CONDUCTION BAND OFFSET; DIELECTRIC CONSTANTS; ENERGY-BAND ALIGNMENT; HOLE BARRIER; VALENCE BAND OFFSETS;

ALIGNMENT; ALUMINUM; ATOMIC SPECTROSCOPY; DIELECTRIC MATERIALS; ELECTRON MOBILITY; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; SILICON CARBIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 75749084110 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3291620 Document Type: Article

Times cited : (73)

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