메뉴 건너뛰기




Volumn 353, Issue 6298, 2016, Pages

2D materials and van der Waals heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

BORON DERIVATIVE; BORON NITRIDE; GALLIUM; GRAPHENE; INDIUM; OXIDE; TRANSITION ELEMENT; UNCLASSIFIED DRUG;

EID: 84979986215     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.aac9439     Document Type: Review
Times cited : (5892)

References (139)
  • 1
    • 23044442056 scopus 로고    scopus 로고
    • Two-dimensional atomic crystals
    • pmid: 16027370
    • K. S. Novoselov et al., Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. U.S.A. 102, 10451-10453 (2005). doi: 10.1073/pnas.0502848102; pmid: 16027370
    • (2005) Proc. Natl. Acad. Sci. U.S.A. , vol.102 , pp. 10451-10453
    • Novoselov, K.S.1
  • 2
    • 7444220645 scopus 로고    scopus 로고
    • Electric field effect in atomically thin carbon films
    • pmid: 15499015
    • K. S. Novoselov et al., Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004). doi: 10.1126/ science.1102896; pmid: 15499015
    • (2004) Science , vol.306 , pp. 666-669
    • Novoselov, K.S.1
  • 3
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • pmid: 21230799
    • K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010). doi: 10.1103/PhysRevLett.105.136805; pmid: 21230799
    • (2010) Phys. Rev. Lett , vol.105
    • Mak, K.F.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.F.5
  • 4
    • 84898060562 scopus 로고    scopus 로고
    • Phosphorene: An unexplored 2D semiconductor with a high hole mobility
    • pmid: 24655084
    • H. Liu et al., Phosphorene: An unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014). doi: 10.1021/nn501226z; pmid: 24655084
    • (2014) ACS Nano , vol.8 , pp. 4033-4041
    • Liu, H.1
  • 5
    • 84860492111 scopus 로고    scopus 로고
    • Emergence of superlattice Dirac points in graphene on hexagonal boron nitride
    • M. Yankowitz et al., Emergence of superlattice Dirac points in graphene on hexagonal boron nitride. Nat. Phys. 8, 382-386 (2012). doi: 10.1038/nphys2272
    • (2012) Nat. Phys , vol.8 , pp. 382-386
    • Yankowitz, M.1
  • 6
    • 84878391708 scopus 로고    scopus 로고
    • Cloning of Dirac fermions in graphene superlattices
    • pmid: 23676678
    • L. A. Ponomarenko et al., Cloning of Dirac fermions in graphene superlattices. Nature 497, 594-597 (2013). doi: 10.1038/nature12187; pmid: 23676678
    • (2013) Nature , vol.497 , pp. 594-597
    • Ponomarenko, L.A.1
  • 7
    • 84878398531 scopus 로고    scopus 로고
    • Hofstadter's butterfly and the fractal quantum Hall effect in moiré superlattices
    • pmid: 23676673
    • C. R. Dean et al., Hofstadter's butterfly and the fractal quantum Hall effect in moiré superlattices. Nature 497, 598-602 (2013). doi: 10.1038/nature12186; pmid: 23676673
    • (2013) Nature , vol.497 , pp. 598-602
    • Dean, C.R.1
  • 8
    • 84879269174 scopus 로고    scopus 로고
    • Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure
    • pmid: 23686343
    • B. Hunt et al., Massive Dirac fermions and Hofstadter butterfly in a van der Waals heterostructure. Science 340, 1427-1430 (2013). doi: 10.1126/science.1237240; pmid: 23686343
    • (2013) Science , vol.340 , pp. 1427-1430
    • Hunt, B.1
  • 9
    • 84903784331 scopus 로고    scopus 로고
    • Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices
    • G. L. Yu et al., Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices. Nat. Phys. 10, 525-529 (2014). doi: 10.1038/nphys2979
    • (2014) Nat. Phys , vol.10 , pp. 525-529
    • Yu, G.L.1
  • 10
    • 84901986223 scopus 로고    scopus 로고
    • Commensurate-incommensurate transition in graphene on hexagonal boron nitride
    • C. R. Woods et al., Commensurate-incommensurate transition in graphene on hexagonal boron nitride. Nat. Phys. 10, 451-456 (2014). doi: 10.1038/nphys2954
    • (2014) Nat. Phys , vol.10 , pp. 451-456
    • Woods, C.R.1
  • 11
    • 84910623221 scopus 로고    scopus 로고
    • Spin-orbit proximity effect in graphene
    • pmid: 25255743
    • A. Avsar et al., Spin-orbit proximity effect in graphene. Nat. Commun. 5, 4875 (2014). doi: 10.1038/ncomms5875; pmid: 25255743
    • (2014) Nat. Commun , vol.5 , pp. 4875
    • Avsar, A.1
  • 12
    • 84942306950 scopus 로고    scopus 로고
    • Strong interface-induced spin-orbit interaction in graphene on WS2
    • pmid: 26391068
    • Z. Wang et al., Strong interface-induced spin-orbit interaction in graphene on WS2. Nat. Commun. 6, 8339 (2015). doi: 10.1038/ncomms9339; pmid: 26391068
    • (2015) Nat. Commun , vol.6 , pp. 8339
    • Wang, Z.1
  • 13
    • 84884880701 scopus 로고    scopus 로고
    • Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides
    • A. Carvalho, R. M. Ribeiro, A. H. Castro Neto, Band nesting and the optical response of two-dimensional semiconducting transition metal dichalcogenides. Phys. Rev. B 88, 115205 (2013). doi: 10.1103/PhysRevB.88.115205
    • (2013) Phys. Rev. B , vol.88
    • Carvalho, A.1    Ribeiro, R.M.2    Castro Neto, A.H.3
  • 15
    • 84879398968 scopus 로고    scopus 로고
    • Stability of edges and extended defects on boron nitride and graphene monolayers: The role of chemical environment
    • L. C. Gomes, S. S. Alexandre, H. Chacham, R. W. Nunes, Stability of edges and extended defects on boron nitride and graphene monolayers: The role of chemical environment. J. Phys. Chem. C 117, 11770-11779 (2013). doi: 10.1021/ jp400420m
    • (2013) J. Phys. Chem. B , vol.117 , pp. 11770-11779
    • Gomes, L.C.1    Alexandre, S.S.2    Chacham, H.3    Nunes, R.W.4
  • 16
    • 84935856581 scopus 로고    scopus 로고
    • Intrinsic defects in gallium sulfide monolayer: A first-principles study
    • H. Chen, Y. Li, L. Huang, J. B. Li, Intrinsic defects in gallium sulfide monolayer: A first-principles study. RSC Advances 5, 50883-50889 (2015). doi: 10.1039/C5RA08329J
    • (2015) RSC Advances , vol.5 , pp. 50883-50889
    • Chen, H.1    Li, Y.2    Huang, L.3    Li, J.B.4
  • 17
    • 84916226120 scopus 로고    scopus 로고
    • Transition from parabolic to ring-shaped valence band maximum in fewlayer GaS
    • D. V. Rybkovskiy, A. V. Osadchy, E. D. Obraztsova, Transition from parabolic to ring-shaped valence band maximum in fewlayer GaS, GaSe, and InSe. Phys. Rev. B 90, 235302 (2014). doi: 10.1103/PhysRevB.90.235302
    • (2014) GaSe, and InSe. Phys. Rev. B , vol.90
    • Rybkovskiy, D.V.1    Osadchy, A.V.2    Obraztsova, E.D.3
  • 18
    • 84918249181 scopus 로고
    • The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
    • J. A. Wilson, A. D. Yoffe, The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193-335 (1969). doi: 10.1080/00018736900101307
    • (1969) Adv. Phys , vol.18 , pp. 193-335
    • Wilson, J.A.1    Yoffe, A.D.2
  • 19
    • 0001093451 scopus 로고    scopus 로고
    • Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides
    • pmid: 11328180
    • A. H. Castro Neto, Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides. Phys. Rev. Lett. 86, 4382-4385 (2001). doi: 10.1103/PhysRevLett.86.4382; pmid: 11328180
    • (2001) Phys. Rev. Lett , vol.86 , pp. 4382-4385
    • Castro Neto, A.H.1
  • 20
    • 0034315881 scopus 로고    scopus 로고
    • Charge-density-wave-induced modifications to the quasiparticle self-energy in 2H- TaSe2
    • pmid: 11082645
    • T. Valla et al., Charge-density-wave-induced modifications to the quasiparticle self-energy in 2H- TaSe2. Phys. Rev. Lett. 85, 4759-4762 (2000). doi: 10.1103/PhysRevLett.85.4759; pmid: 11082645
    • (2000) Phys. Rev. Lett , vol.85 , pp. 4759-4762
    • Valla, T.1
  • 21
    • 0026108553 scopus 로고
    • STM spectroscopy of vortex cores and the flux lattice
    • H. F. Hess, R. B. Robinson, J. V. Waszczak, STM spectroscopy of vortex cores and the flux lattice. Physica B 169, 422-431 (1991). doi: 10.1016/0921-4526(91)90262-D
    • (1991) Physica B , vol.169 , pp. 422-431
    • Hess, H.F.1    Robinson, R.B.2    Waszczak, J.V.3
  • 22
    • 84954565199 scopus 로고    scopus 로고
    • Controlling many-body states by the electricfield effect in a two-dimensional material
    • pmid: 26700810
    • L. J. Li et al., Controlling many-body states by the electricfield effect in a two-dimensional material. Nature 529, 185-189 (2016). doi: 10.1038/nature16175; pmid: 26700810
    • (2016) Nature , vol.529 , pp. 185-189
    • Li, L.J.1
  • 23
    • 33750016779 scopus 로고
    • Existence of long-range order in one and two dimensions
    • P. C. Hohenberg, Existence of long-range order in one and two dimensions. Phys. Rev. 158, 383-386 (1967). doi: 10.1103/PhysRev.158.383
    • (1967) Phys. Rev , vol.158 , pp. 383-386
    • Hohenberg, P.C.1
  • 24
    • 35949013580 scopus 로고
    • The two-dimensional Coulomb gas, vortex unbinding, and superfluid-superconducting films
    • P. Minnhagen, The two-dimensional Coulomb gas, vortex unbinding, and superfluid-superconducting films. Rev. Mod. Phys. 59, 1001-1066 (1987). doi: 10.1103/RevModPhys.59.1001
    • (1987) Rev. Mod. Phys , vol.59 , pp. 1001-1066
    • Minnhagen, P.1
  • 25
    • 84921775707 scopus 로고    scopus 로고
    • Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor
    • pmid: 25560634
    • J. Shang et al., Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor. ACS Nano 9, 647-655 (2015). doi: 10.1021/nn5059908; pmid: 25560634
    • (2015) ACS Nano , vol.9 , pp. 647-655
    • Shang, J.1
  • 26
    • 84875437247 scopus 로고    scopus 로고
    • Tightly bound trions in monolayer MoS2
    • pmid: 23202371
    • K. F. Mak et al., Tightly bound trions in monolayer MoS2. Nat. Mater. 12, 207-211 (2013). doi: 10.1038/nmat3505; pmid: 23202371
    • (2013) Nat. Mater , vol.12 , pp. 207-211
    • Mak, K.F.1
  • 27
    • 84924940117 scopus 로고    scopus 로고
    • Exciton binding energy of monolayer WS2
    • pmid: 25783023
    • B. Zhu, X. Chen, X. Cui, Exciton binding energy of monolayer WS2. Sci. Rep. 5, 9218 (2015). doi: 10.1038/srep09218; pmid: 25783023
    • (2015) Sci. Rep , vol.5 , pp. 9218
    • Zhu, B.1    Chen, X.2    Cui, X.3
  • 28
    • 84908045379 scopus 로고    scopus 로고
    • Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2
    • pmid: 25170725
    • A. Chernikov et al., Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2. Phys. Rev. Lett. 113, 076802 (2014). doi: 10.1103/ PhysRevLett.113.076802; pmid: 25170725
    • (2014) Phys. Rev. Lett , vol.113
    • Chernikov, A.1
  • 29
    • 84908052982 scopus 로고    scopus 로고
    • Probing excitonic dark states in single-layer tungsten disulphide
    • pmid: 25162523
    • Z. Ye et al., Probing excitonic dark states in single-layer tungsten disulphide. Nature 513, 214-218 (2014). doi: 10.1038/nature13734; pmid: 25162523
    • (2014) Nature , vol.513 , pp. 214-218
    • Ye, Z.1
  • 30
    • 84860752361 scopus 로고    scopus 로고
    • Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
    • pmid: 23003071
    • D. Xiao, G.-B. Liu, W. Feng, X. Xu, W. Yao, Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012). doi: 10.1103/PhysRevLett.108.196802; pmid: 23003071
    • (2012) Phys. Rev. Lett , vol.108
    • Xiao, D.1    Liu, G.-B.2    Feng, W.3    Xu, X.4    Yao, W.5
  • 31
    • 84864881664 scopus 로고    scopus 로고
    • Valley polarization in MoS2 monolayers by optical pumping
    • pmid: 22706701
    • H. Zeng, J. Dai, W. Yao, D. Xiao, X. Cui, Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 7, 490-493 (2012). doi: 10.1038/nnano.2012.95; pmid: 22706701
    • (2012) Nat. Nanotechnol , vol.7 , pp. 490-493
    • Zeng, H.1    Dai, J.2    Yao, W.3    Xiao, D.4    Cui, X.5
  • 32
    • 84863325332 scopus 로고    scopus 로고
    • Valley-selective circular dichroism of monolayer molybdenum disulphide
    • pmid: 22673914
    • T. Cao et al., Valley-selective circular dichroism of monolayer molybdenum disulphide. Nat. Commun. 3, 887 (2012). doi: 10.1038/ncomms1882; pmid: 22673914
    • (2012) Nat. Commun , vol.3 , pp. 887
    • Cao, T.1
  • 33
    • 84864874878 scopus 로고    scopus 로고
    • Control of valley polarization in monolayer MoS2 by optical helicity
    • pmid: 22706698
    • K. F. Mak, K. He, J. Shan, T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 7, 494-498 (2012). doi: 10.1038/ nnano.2012.96; pmid: 22706698
    • (2012) Nat. Nanotechnol , vol.7 , pp. 494-498
    • Mak, K.F.1    He, K.2    Shan, J.3    Heinz, T.F.4
  • 34
    • 84883740799 scopus 로고    scopus 로고
    • Optical generation of excitonic valley coherence in monolayer WSe2
    • pmid: 23934096
    • A. M. Jones et al., Optical generation of excitonic valley coherence in monolayer WSe2. Nat. Nanotechnol. 8, 634-638 (2013). doi: 10.1038/nnano.2013.151; pmid: 23934096
    • (2013) Nat. Nanotechnol , vol.8 , pp. 634-638
    • Jones, A.M.1
  • 35
    • 36849027178 scopus 로고    scopus 로고
    • Valley-contrasting physics in graphene: Magnetic moment and topological transport
    • pmid: 18233399
    • D. Xiao, W. Yao, Q. Niu, Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007). doi: 10.1103/ PhysRevLett.99.236809; pmid: 18233399
    • (2007) Phys. Rev. Lett , vol.99
    • Xiao, D.1    Yao, W.2    Niu, Q.3
  • 36
    • 84903281184 scopus 로고    scopus 로고
    • The valley Hall effect in MoS2 transistors
    • pmid: 24970080
    • K. F. Mak, K. L. McGill, J. Park, P. L. McEuen, The valley Hall effect in MoS2 transistors. Science 344, 1489-1492 (2014). doi: 10.1126/science.1250140; pmid: 24970080
    • (2014) Science , vol.344 , pp. 1489-1492
    • Mak, K.F.1    McGill, K.L.2    Park, J.3    McEuen, P.L.4
  • 37
    • 84901193930 scopus 로고    scopus 로고
    • Black phosphorus field-effect transistors
    • pmid: 24584274
    • L. Li et al., Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372-377 (2014). doi: 10.1038/ nnano.2014.35; pmid: 24584274
    • (2014) Nat. Nanotechnol , vol.9 , pp. 372-377
    • Li, L.1
  • 38
    • 84904616293 scopus 로고    scopus 로고
    • High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
    • pmid: 25042376
    • J. Qiao, X. Kong, Z. X. Hu, F. Yang, W. Ji, High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus. Nat. Commun. 5, 4475 (2014). doi: 10.1038/ ncomms5475; pmid: 25042376
    • (2014) Nat. Commun , vol.5 , pp. 4475
    • Qiao, J.1    Kong, X.2    Hu, Z.X.3    Yang, F.4    Ji, W.5
  • 39
    • 84910142215 scopus 로고    scopus 로고
    • Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene
    • pmid: 25254626
    • R. Fei et al., Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene. Nano Lett. 14, 6393-6399 (2014). doi: 10.1021/nl502865s; pmid: 25254626
    • (2014) Nano Lett , vol.14 , pp. 6393-6399
    • Fei, R.1
  • 40
    • 84940069240 scopus 로고    scopus 로고
    • Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
    • L. C. Gomes, A. Carvalho, Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure. Phys. Rev. B 92, 085406 (2015). doi: 10.1103/PhysRevB.92.085406
    • (2015) Phys. Rev. B , vol.92
    • Gomes, L.C.1    Carvalho, A.2
  • 41
    • 84950336488 scopus 로고    scopus 로고
    • Enhanced piezoelectricity and modified dielectric screening of two-dimensional group-IV monochalcogenides
    • L. C. Gomes, A. Carvalho, A. H. Castro Neto, Enhanced piezoelectricity and modified dielectric screening of two-dimensional group-IV monochalcogenides. Phys. Rev. B 92, 214103 (2015). doi: 10.1103/PhysRevB.92.214103
    • (2015) Phys. Rev. B , vol.92
    • Gomes, L.C.1    Carvalho, A.2    Castro Neto, A.H.3
  • 42
    • 84877897894 scopus 로고    scopus 로고
    • Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
    • V. Zólyomi, N. D. Drummond, V. I. Fal'ko, Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides. Phys. Rev. B 87, 195403 (2013). doi: 10.1103/ PhysRevB.87.195403
    • (2013) Phys. Rev. B , vol.87
    • Zólyomi, V.1    Drummond, N.D.2    Fal'Ko, V.I.3
  • 43
    • 84901477917 scopus 로고    scopus 로고
    • Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
    • V. Zólyomi, N. D. Drummond, V. I. Fal'ko, Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations. Phys. Rev. B 89, 205416 (2014). doi: 10.1103/PhysRevB.89.205416
    • (2014) Phys. Rev. B , vol.89
    • Zólyomi, V.1    Drummond, N.D.2    Fal'Ko, V.I.3
  • 44
    • 84863670508 scopus 로고    scopus 로고
    • GaS and GaSe ultrathin layer transistors
    • pmid: 22678832
    • D. J. Late et al., GaS and GaSe ultrathin layer transistors. Adv. Mater. 24, 3549-3554 (2012). doi: 10.1002/ adma.201201361; pmid: 22678832
    • (2012) Adv. Mater , vol.24 , pp. 3549-3554
    • Late, D.J.1
  • 45
    • 84864195463 scopus 로고    scopus 로고
    • Synthesis of fewlayer GaSe nanosheets for high performance photodetectors
    • pmid: 22676041
    • P. Hu, Z. Wen, L. Wang, P. Tan, K. Xiao, Synthesis of fewlayer GaSe nanosheets for high performance photodetectors. ACS Nano 6, 5988-5994 (2012). doi: 10.1021/nn300889c; pmid: 22676041
    • (2012) ACS Nano , vol.6 , pp. 5988-5994
    • Hu, P.1    Wen, Z.2    Wang, L.3    Tan, P.4    Xiao, K.5
  • 46
    • 84979990222 scopus 로고    scopus 로고
    • S. Wu et al., http://arxiv.org/abs/1409.4733 (2014).
    • (2014)
    • Wu, S.1
  • 47
    • 77957908617 scopus 로고    scopus 로고
    • Boron nitride substrates for high-quality graphene electronics
    • pmid: 20729834
    • C. R. Dean et al., Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 5, 722-726 (2010). doi: 10.1038/nnano.2010.172; pmid: 20729834
    • (2010) Nat. Nanotechnol , vol.5 , pp. 722-726
    • Dean, C.R.1
  • 48
    • 84883171868 scopus 로고    scopus 로고
    • Epitaxial growth of single-domain graphene on hexagonal boron nitride
    • pmid: 23852399
    • W. Yang et al., Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat. Mater. 12, 792-797 (2013). doi: 10.1038/nmat3695; pmid: 23852399
    • (2013) Nat. Mater , vol.12 , pp. 792-797
    • Yang, W.1
  • 49
    • 0024108673 scopus 로고
    • Superconductivity near 70 K in a new family of layered copper oxides
    • R. J. Cava et al., Superconductivity near 70 K in a new family of layered copper oxides. Nature 336, 211-214 (1988). doi: 10.1038/336211a0
    • (1988) Nature , vol.336 , pp. 211-214
    • Cava, R.J.1
  • 50
    • 0037422071 scopus 로고    scopus 로고
    • Superconductivity in two-dimensional CoO2 layers
    • pmid: 12621429
    • K. Takada et al., Superconductivity in two-dimensional CoO2 layers. Nature 422, 53-55 (2003). doi: 10.1038/ nature01450; pmid: 12621429
    • (2003) Nature , vol.422 , pp. 53-55
    • Takada, K.1
  • 51
    • 84922455792 scopus 로고    scopus 로고
    • Phosphorene oxides: Bandgap engineering of phosphorene by oxidation
    • A. Ziletti et al., Phosphorene oxides: Bandgap engineering of phosphorene by oxidation. Phys. Rev. B 91, 085407 (2015). doi: 10.1103/PhysRevB.91.085407
    • (2015) Phys. Rev. B , vol.91
    • Ziletti, A.1
  • 52
    • 84945978170 scopus 로고    scopus 로고
    • Bandgap engineering of phosphorene by laser oxidation toward functional 2D materials
    • pmid: 26364647
    • J. Lu et al., Bandgap engineering of phosphorene by laser oxidation toward functional 2D materials. ACS Nano 9, 10411-10421 (2015). doi: 10.1021/acsnano.5b04623; pmid: 26364647
    • (2015) ACS Nano , vol.9 , pp. 10411-10421
    • Lu, J.1
  • 53
    • 84903544471 scopus 로고    scopus 로고
    • The emergence of perovskite solar cells
    • M. A. Green, A. Ho-Baillie, H. J. Snaith, The emergence of perovskite solar cells. Nat. Photonics 8, 506-514 (2014). doi: 10.1038/nphoton.2014.134
    • (2014) Nat. Photonics , vol.8 , pp. 506-514
    • Green, M.A.1    Ho-Baillie, A.2    Snaith, H.J.3
  • 54
    • 84881167566 scopus 로고    scopus 로고
    • Van der Waals heterostructures
    • pmid: 23887427
    • A. K. Geim, I. V. Grigorieva, van der Waals heterostructures. Nature 499, 419-425 (2013). doi: 10.1038/nature12385; pmid: 23887427
    • (2013) Nature , vol.499 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2
  • 55
    • 84866379080 scopus 로고    scopus 로고
    • Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
    • pmid: 22842512
    • S. J. Haigh et al., Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Nat. Mater. 11, 764-767 (2012). doi: 10.1038/nmat3386; pmid: 22842512
    • (2012) Nat. Mater , vol.11 , pp. 764-767
    • Haigh, S.J.1
  • 56
    • 84887299269 scopus 로고    scopus 로고
    • One-dimensional electrical contact to a twodimensional material
    • pmid: 24179223
    • L. Wang et al., One-dimensional electrical contact to a twodimensional material. Science 342, 614-617 (2013). doi: 10.1126/science.1244358; pmid: 24179223
    • (2013) Science , vol.342 , pp. 614-617
    • Wang, L.1
  • 57
    • 84902295574 scopus 로고    scopus 로고
    • Electronic properties of graphene encapsulated with different two-dimensional atomic crystals
    • pmid: 24844319
    • A. V. Kretinin et al., Electronic properties of graphene encapsulated with different two-dimensional atomic crystals. Nano Lett. 14, 3270-3276 (2014). doi: 10.1021/nl5006542; pmid: 24844319
    • (2014) Nano Lett , vol.14 , pp. 3270-3276
    • Kretinin, A.V.1
  • 58
    • 35548976235 scopus 로고    scopus 로고
    • Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations
    • G. Giovannetti, P. A. Khomyakov, G. Brocks, P. J. Kelly, J. van den Brink, Substrate-induced band gap in graphene on hexagonal boron nitride: Ab initio density functional calculations. Phys. Rev. B 76, 073103 (2007). doi: 10.1103/ PhysRevB.76.073103
    • (2007) Phys. Rev. B , vol.76
    • Giovannetti, G.1    Khomyakov, P.A.2    Brocks, G.3    Kelly, P.J.4    Brink Den Van, J.5
  • 59
    • 84887836437 scopus 로고    scopus 로고
    • Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures
    • pmid: 24079953
    • J. Kang, J. Li, S. S. Li, J. B. Xia, L. W. Wang, Electronic structural Moiré pattern effects on MoS2/MoSe2 2D heterostructures. Nano Lett. 13, 5485-5490 (2013). doi: 10.1021/nl4030648; pmid: 24079953
    • (2013) Nano Lett , vol.13 , pp. 5485-5490
    • Kang, J.1    Li, J.2    Li, S.S.3    Xia, J.B.4    Wang, L.W.5
  • 60
    • 84902252516 scopus 로고    scopus 로고
    • Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers
    • pmid: 24845201
    • S. Tongay et al., Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers. Nano Lett. 14, 3185-3190 (2014). doi: 10.1021/nl500515q; pmid: 24845201
    • (2014) Nano Lett , vol.14 , pp. 3185-3190
    • Tongay, S.1
  • 61
    • 84921827039 scopus 로고    scopus 로고
    • Superlubricity of two-dimensional fluorographene/MoS2 heterostructure: A first-principles study
    • pmid: 25180979
    • L. F. Wang et al., Superlubricity of two-dimensional fluorographene/MoS2 heterostructure: A first-principles study. Nanotechnology 25, 385701 (2014). doi: 10.1088/ 0957-4484/25/38/385701; pmid: 25180979
    • (2014) Nanotechnology , vol.25
    • Wang, L.F.1
  • 62
    • 84875773096 scopus 로고    scopus 로고
    • Novel heterolayered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
    • pmid: 23528957
    • H. Terrones, F. López-Urías, M. Terrones, Novel heterolayered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci. Rep. 3, 1549 (2013). doi: 10.1038/srep01549; pmid: 23528957
    • (2013) Sci. Rep , vol.3 , pp. 1549
    • Terrones, H.1    López-Urías, F.2    Terrones, M.3
  • 63
    • 84929192661 scopus 로고    scopus 로고
    • Observation of interlayer phonon modes in van der Waals heterostructures
    • C. H. Lui et al., Observation of interlayer phonon modes in van der Waals heterostructures. Phys. Rev. B 91, 165403 (2015). doi: 10.1103/PhysRevB.91.165403
    • (2015) Phys. Rev. B , vol.91
    • Lui, C.H.1
  • 64
    • 84906534913 scopus 로고    scopus 로고
    • Structures, energetics, and electronic properties of multifarious stacking patterns for high-buckled and low-buckled silicene on the MoS2 substrate
    • L. Y. Li, M. W. Zhao, Structures, energetics, and electronic properties of multifarious stacking patterns for high-buckled and low-buckled silicene on the MoS2 substrate. J. Phys. Chem. C 118, 19129-19138 (2014). doi: 10.1021/jp5043359
    • (2014) J. Phys. Chem. B , vol.118 , pp. 19129-19138
    • Li, L.Y.1    Zhao, M.W.2
  • 66
    • 84874451562 scopus 로고    scopus 로고
    • Interaction phenomena in graphene seen through quantum capacitance
    • pmid: 23401538
    • G. L. Yu et al., Interaction phenomena in graphene seen through quantum capacitance. Proc. Natl. Acad. Sci. U.S.A. 110, 3282-3286 (2013). doi: 10.1073/pnas.1300599110; pmid: 23401538
    • (2013) Proc. Natl. Acad. Sci. U.S.A. , vol.110 , pp. 3282-3286
    • Yu, G.L.1
  • 67
    • 84947252479 scopus 로고    scopus 로고
    • Probing 2D black phosphorus by quantum capacitance measurements
    • pmid: 26559656
    • M. Kuiri et al., Probing 2D black phosphorus by quantum capacitance measurements. Nanotechnology 26, 485704 (2015). doi: 10.1088/0957-4484/26/48/485704; pmid: 26559656
    • (2015) Nanotechnology , vol.26
    • Kuiri, M.1
  • 68
    • 84870615865 scopus 로고    scopus 로고
    • Strong Coulomb drag and broken symmetry in double-layer graphene
    • R. V. Gorbachev et al., Strong Coulomb drag and broken symmetry in double-layer graphene. Nat. Phys. 8, 896-901 (2012). doi: 10.1038/nphys2441
    • (2012) Nat. Phys , vol.8 , pp. 896-901
    • Gorbachev, R.V.1
  • 69
    • 83755178686 scopus 로고    scopus 로고
    • Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
    • G. H. Lee et al., Electron tunneling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett. 99, 243114 (2011). doi: 10.1063/1.3662043
    • (2011) Appl. Phys. Lett , vol.99
    • Lee, G.H.1
  • 70
    • 84857567921 scopus 로고    scopus 로고
    • Field-effect tunneling transistor based on vertical graphene heterostructures
    • pmid: 22300848
    • L. Britnell et al., Field-effect tunneling transistor based on vertical graphene heterostructures. Science 335, 947-950 (2012). doi: 10.1126/science.1218461; pmid: 22300848
    • (2012) Science , vol.335 , pp. 947-950
    • Britnell, L.1
  • 71
    • 84863230525 scopus 로고    scopus 로고
    • Tunneling spectroscopy of graphene-boronnitride heterostructures
    • F. Amet et al., Tunneling spectroscopy of graphene-boronnitride heterostructures. Phys. Rev. B 85, 073405 (2012). doi: 10.1103/PhysRevB.85.073405
    • (2012) Phys. Rev. B , vol.85
    • Amet, F.1
  • 72
    • 84915775124 scopus 로고    scopus 로고
    • Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
    • pmid: 25194946
    • A. Mishchenko et al., Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nat. Nanotechnol. 9, 808-813 (2014). doi: 10.1038/ nnano.2014.187; pmid: 25194946
    • (2014) Nat. Nanotechnol , vol.9 , pp. 808-813
    • Mishchenko, A.1
  • 73
    • 84873570571 scopus 로고    scopus 로고
    • Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics
    • pmid: 23263726
    • T. Georgiou et al., Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8, 100-103 (2013). doi: 10.1038/nnano.2012.224; pmid: 23263726
    • (2013) Nat. Nanotechnol , vol.8 , pp. 100-103
    • Georgiou, T.1
  • 74
    • 84875886821 scopus 로고    scopus 로고
    • Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
    • pmid: 23535645
    • M. S. Choi et al., Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices. Nat. Commun. 4, 1624 (2013). doi: 10.1038/ncomms2652; pmid: 23535645
    • (2013) Nat. Commun , vol.4 , pp. 1624
    • Choi, M.S.1
  • 75
    • 84861659653 scopus 로고    scopus 로고
    • Graphene barristor, a triode device with a gatecontrolled Schottky barrier
    • pmid: 22604723
    • H. Yang et al., Graphene barristor, a triode device with a gatecontrolled Schottky barrier. Science 336, 1140-1143 (2012). doi: 10.1126/science.1220527; pmid: 22604723
    • (2012) Science , vol.336 , pp. 1140-1143
    • Yang, H.1
  • 76
    • 84934964778 scopus 로고    scopus 로고
    • Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
    • pmid: 26088295
    • Y.-C. Lin et al., Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nat. Commun. 6, 7311 (2015). doi: 10.1038/ncomms8311; pmid: 26088295
    • (2015) Nat. Commun , vol.6 , pp. 7311
    • Lin, Y.-C.1
  • 77
    • 77956280459 scopus 로고    scopus 로고
    • Graphene photonics and optoelectronics
    • F. Bonaccorso, Z. Sun, T. Hasan, A. C. Ferrari, Graphene photonics and optoelectronics. Nat. Photonics 4, 611-622 (2010). doi: 10.1038/nphoton.2010.186
    • (2010) Nat. Photonics , vol.4 , pp. 611-622
    • Bonaccorso, F.1    Sun, Z.2    Hasan, T.3    Ferrari, A.C.4
  • 78
    • 84869074729 scopus 로고    scopus 로고
    • Electronics and optoelectronics of twodimensional transition metal dichalcogenides
    • pmid: 23132225
    • Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, M. S. Strano, Electronics and optoelectronics of twodimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012). doi: 10.1038/ nnano.2012.193; pmid: 23132225
    • (2012) Nat. Nanotechnol , vol.7 , pp. 699-712
    • Wang, Q.H.1    Kalantar-Zadeh, K.2    Kis, A.3    Coleman, J.N.4    Strano, M.S.5
  • 79
    • 84876045534 scopus 로고    scopus 로고
    • Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates
    • pmid: 23465066
    • P. Hu et al., Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates. Nano Lett. 13, 1649-1654 (2013). doi: 10.1021/nl400107k; pmid: 23465066
    • (2013) Nano Lett , vol.13 , pp. 1649-1654
    • Hu, P.1
  • 80
    • 84900504073 scopus 로고    scopus 로고
    • High performance and bendable few-layered InSe photodetectors with broad spectral response
    • pmid: 24742243
    • S. R. Tamalampudi et al., High performance and bendable few-layered InSe photodetectors with broad spectral response. Nano Lett. 14, 2800-2806 (2014). doi: 10.1021/ nl500817g; pmid: 24742243
    • (2014) Nano Lett , vol.14 , pp. 2800-2806
    • Tamalampudi, S.R.1
  • 81
    • 84902254278 scopus 로고    scopus 로고
    • Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors
    • pmid: 24821381
    • M. Buscema et al., Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347-3352 (2014). doi: 10.1021/nl5008085; pmid: 24821381
    • (2014) Nano Lett , vol.14 , pp. 3347-3352
    • Buscema, M.1
  • 83
    • 84910118830 scopus 로고    scopus 로고
    • Photodetectors based on graphene, other two-dimensional materials and hybrid systems
    • pmid: 25286273
    • F. H. L. Koppens et al., Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nat. Nanotechnol. 9, 780-793 (2014). doi: 10.1038/ nnano.2014.215; pmid: 25286273
    • (2014) Nat. Nanotechnol , vol.9 , pp. 780-793
    • Koppens, F.H.L.1
  • 84
    • 84898614268 scopus 로고    scopus 로고
    • Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide
    • pmid: 24608231
    • B. W. H. Baugher, H. O. H. Churchill, Y. Yang, P. Jarillo-Herrero, Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 9, 262-267 (2014). doi: 10.1038/ nnano.2014.25; pmid: 24608231
    • (2014) Nat. Nanotechnol , vol.9 , pp. 262-267
    • Baugher, B.W.H.1    Churchill, H.O.H.2    Yang, Y.3    Jarillo-Herrero, P.4
  • 85
    • 84888347307 scopus 로고    scopus 로고
    • Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices
    • pmid: 24141541
    • K. Roy et al., Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 8, 826-830 (2013). doi: 10.1038/ nnano.2013.206; pmid: 24141541
    • (2013) Nat. Nanotechnol , vol.8 , pp. 826-830
    • Roy, K.1
  • 86
    • 84899634522 scopus 로고    scopus 로고
    • Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
    • pmid: 24733906
    • H. Fang et al., Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl. Acad. Sci. U.S.A. 111, 6198-6202 (2014). doi: 10.1073/pnas.1405435111; pmid: 24733906
    • (2014) Proc. Natl. Acad. Sci. U.S.A. , vol.111 , pp. 6198-6202
    • Fang, H.1
  • 87
    • 84923914376 scopus 로고    scopus 로고
    • Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures
    • pmid: 25708612
    • P. Rivera et al., Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures. Nat. Commun. 6, 6242 (2015). doi: 10.1038/ncomms7242; pmid: 25708612
    • (2015) Nat. Commun , vol.6 , pp. 6242
    • Rivera, P.1
  • 88
    • 84946882266 scopus 로고    scopus 로고
    • Tunable GaTe-MoS2 van der Waals p-n Junctions with novel optoelectronic performance
    • pmid: 26469092
    • F. Wang et al., Tunable GaTe-MoS2 van der Waals p-n Junctions with novel optoelectronic performance. Nano Lett. 15, 7558-7566 (2015). doi: 10.1021/acs.nanolett.5b03291; pmid: 26469092
    • (2015) Nano Lett , vol.15 , pp. 7558-7566
    • Wang, F.1
  • 89
    • 84907880386 scopus 로고    scopus 로고
    • Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes
    • pmid: 25157588
    • R. Cheng et al., Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p-n diodes. Nano Lett. 14, 5590-5597 (2014). doi: 10.1021/ nl502075n; pmid: 25157588
    • (2014) Nano Lett , vol.14 , pp. 5590-5597
    • Cheng, R.1
  • 90
    • 84906663902 scopus 로고    scopus 로고
    • Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode
    • pmid: 25019534
    • Y. Deng et al., Black phosphorus-monolayer MoS2 van der Waals heterojunction p-n diode. ACS Nano 8, 8292-8299 (2014). doi: 10.1021/nn5027388; pmid: 25019534
    • (2014) ACS Nano , vol.8 , pp. 8292-8299
    • Deng, Y.1
  • 91
    • 84878942676 scopus 로고    scopus 로고
    • Strong light-matter interactions in heterostructures of atomically thin films
    • pmid: 23641062
    • L. Britnell et al., Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311-1314 (2013). doi: 10.1126/science.1235547; pmid: 23641062
    • (2013) Science , vol.340 , pp. 1311-1314
    • Britnell, L.1
  • 92
    • 85027922386 scopus 로고    scopus 로고
    • High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures
    • pmid: 25981798
    • G. W. Mudd et al., High broad-band photoresponsivity of mechanically formed InSe-graphene van der Waals heterostructures. Adv. Mater. 27, 3760-3766 (2015). doi: 10.1002/adma.201500889; pmid: 25981798
    • (2015) Adv. Mater , vol.27 , pp. 3760-3766
    • Mudd, G.W.1
  • 93
    • 84925484117 scopus 로고    scopus 로고
    • Light-emitting diodes by band-structure engineering in van der Waals heterostructures
    • pmid: 25643033
    • F. Withers et al., Light-emitting diodes by band-structure engineering in van der Waals heterostructures. Nat. Mater. 14, 301-306 (2015). doi: 10.1038/nmat4205; pmid: 25643033
    • (2015) Nat. Mater , vol.14 , pp. 301-306
    • Withers, F.1
  • 94
    • 84949642283 scopus 로고    scopus 로고
    • WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature
    • pmid: 26555037
    • F. Withers et al., WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature. Nano Lett. 15, 8223-8228 (2015). doi: 10.1021/acs.nanolett.5b03740; pmid: 26555037
    • (2015) Nano Lett , vol.15 , pp. 8223-8228
    • Withers, F.1
  • 96
    • 84896795750 scopus 로고    scopus 로고
    • Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride
    • pmid: 24604197
    • S. Dai et al., Tunable phonon polaritons in atomically thin van der Waals crystals of boron nitride. Science 343, 1125-1129 (2014). doi: 10.1126/science.1246833; pmid: 24604197
    • (2014) Science , vol.343 , pp. 1125-1129
    • Dai, S.1
  • 97
    • 84925356854 scopus 로고    scopus 로고
    • Highly confined low-loss plasmons in graphene-boron nitride heterostructures
    • pmid: 25532073
    • A. Woessner et al., Highly confined low-loss plasmons in graphene-boron nitride heterostructures. Nat. Mater. 14, 421-425 (2015). doi: 10.1038/nmat4169; pmid: 25532073
    • (2015) Nat. Mater , vol.14 , pp. 421-425
    • Woessner, A.1
  • 98
    • 84893867653 scopus 로고    scopus 로고
    • Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics
    • K. Zhang et al., Large scale graphene/hexagonal boron nitride heterostructure for tunable plasmonics. Adv. Funct. Mater. 24, 731-738 (2014). doi: 10.1002/adfm.201302009
    • (2014) Adv. Funct. Mater , vol.24 , pp. 731-738
    • Zhang, K.1
  • 99
    • 84938748970 scopus 로고    scopus 로고
    • Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial
    • pmid: 26098228
    • S. Dai et al., Graphene on hexagonal boron nitride as a tunable hyperbolic metamaterial. Nat. Nanotechnol. 10, 682-686 (2015). doi: 10.1038/nnano.2015.131; pmid: 26098228
    • (2015) Nat. Nanotechnol , vol.10 , pp. 682-686
    • Dai, S.1
  • 100
    • 84903989317 scopus 로고    scopus 로고
    • Hybrid surface-phonon-plasmon polariton modes in graphene/monolayer h-BN heterostructures
    • pmid: 24874205
    • V. W. Brar et al., Hybrid surface-phonon-plasmon polariton modes in graphene/monolayer h-BN heterostructures. Nano Lett. 14, 3876-3880 (2014). doi: 10.1021/nl501096s; pmid: 24874205
    • (2014) Nano Lett , vol.14 , pp. 3876-3880
    • Brar, V.W.1
  • 101
    • 84908232012 scopus 로고    scopus 로고
    • Generation and morphing of plasmons in graphene superlattices
    • A. Tomadin, F. Guinea, M. Polini, Generation and morphing of plasmons in graphene superlattices. Phys. Rev. B 90, 161406 (2014). doi: 10.1103/PhysRevB.90.161406
    • (2014) Phys. Rev. B , vol.90
    • Tomadin, A.1    Guinea, F.2    Polini, M.3
  • 102
    • 79551634368 scopus 로고    scopus 로고
    • Two-dimensional nanosheets produced by liquid exfoliation of layered materials
    • pmid: 21292974
    • J. N. Coleman et al., Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science 331, 568-571 (2011). doi: 10.1126/science.1194975; pmid: 21292974
    • (2011) Science , vol.331 , pp. 568-571
    • Coleman, J.N.1
  • 103
    • 84860385148 scopus 로고    scopus 로고
    • Inkjet-printed graphene electronics
    • pmid: 22449258
    • F. Torrisi et al., Inkjet-printed graphene electronics. ACS Nano 6, 2992-3006 (2012). doi: 10.1021/nn2044609; pmid: 22449258
    • (2012) ACS Nano , vol.6 , pp. 2992-3006
    • Torrisi, F.1
  • 104
    • 84923355308 scopus 로고    scopus 로고
    • Emerging carbon and post-carbon nanomaterial inks for printed electronics
    • pmid: 26262476
    • E. B. Secor, M. C. Hersam, Emerging carbon and post-carbon nanomaterial inks for printed electronics. J. Phys. Chem. Lett. 6, 620-626 (2015). doi: 10.1021/jz502431r; pmid: 26262476
    • (2015) J. Phys. Chem. Lett , vol.6 , pp. 620-626
    • Secor, E.B.1    Hersam, M.C.2
  • 105
    • 84891808763 scopus 로고    scopus 로고
    • Inkjet deposition of liquid-exfoliated graphene and MoS2 nanosheets for printed device applications
    • D. J. Finn et al., Inkjet deposition of liquid-exfoliated graphene and MoS2 nanosheets for printed device applications. J. Mater. Chem. C 2, 925-932 (2014). doi: 10.1039/ C3TC31993H
    • (2014) J. Mater. Chem. B , vol.2 , pp. 925-932
    • Finn, D.J.1
  • 106
    • 84904015852 scopus 로고    scopus 로고
    • Heterostructures produced from nanosheetbased inks
    • pmid: 24871927
    • F. Withers et al., Heterostructures produced from nanosheetbased inks. Nano Lett. 14, 3987-3992 (2014). doi: 10.1021/ nl501355j; pmid: 24871927
    • (2014) Nano Lett , vol.14 , pp. 3987-3992
    • Withers, F.1
  • 107
    • 84944320636 scopus 로고    scopus 로고
    • Solution-processed dielectrics based on thickness-sorted two-dimensional hexagonal boron nitride nanosheets
    • pmid: 26348822
    • J. Zhu et al., Solution-processed dielectrics based on thickness-sorted two-dimensional hexagonal boron nitride nanosheets. Nano Lett. 15, 7029-7036 (2015). doi: 10.1021/acs.nanolett.5b03075; pmid: 26348822
    • (2015) Nano Lett , vol.15 , pp. 7029-7036
    • Zhu, J.1
  • 108
    • 84929180192 scopus 로고    scopus 로고
    • Tuning the surface charge of 2D oxide nanosheets and the bulk-scale production of superlatticelike composites
    • pmid: 25686203
    • X. Cai et al., Tuning the surface charge of 2D oxide nanosheets and the bulk-scale production of superlatticelike composites. J. Am. Chem. Soc. 137, 2844-2847 (2015). doi: 10.1021/jacs.5b00317; pmid: 25686203
    • (2015) J. Am. Chem. Soc , vol.137 , pp. 2844-2847
    • Cai, X.1
  • 109
    • 84925310830 scopus 로고    scopus 로고
    • Ultrathin few-layered molybdenum selenide/ graphene hybrid with superior electrochemical Li-storage performance
    • L. Ma et al., Ultrathin few-layered molybdenum selenide/ graphene hybrid with superior electrochemical Li-storage performance. J. Power Sources 285, 274-280 (2015). doi: 10.1016/j.jpowsour.2015.03.120
    • (2015) J. Power Sources , vol.285 , pp. 274-280
    • Ma, L.1
  • 110
    • 84959932053 scopus 로고    scopus 로고
    • Catalysis with two-dimensional materials and their heterostructures
    • pmid: 26936816
    • D. Deng et al., Catalysis with two-dimensional materials and their heterostructures. Nat. Nanotechnol. 11, 218-230 (2016). doi: 10.1038/nnano.2015.340; pmid: 26936816
    • (2016) Nat. Nanotechnol , vol.11 , pp. 218-230
    • Deng, D.1
  • 111
    • 84989941347 scopus 로고    scopus 로고
    • Growing vertical in the flatland
    • pmid: 26762232
    • J. A. Robinson, Growing vertical in the flatland. ACS Nano 10, 42-45 (2016). doi: 10.1021/acsnano.5b08117; pmid: 26762232
    • (2016) ACS Nano , vol.10 , pp. 42-45
    • Robinson, J.A.1
  • 112
    • 79955896895 scopus 로고    scopus 로고
    • Direct growth of graphene/hexagonal boron nitride stacked layers
    • pmid: 21488689
    • Z. Liu et al., Direct growth of graphene/hexagonal boron nitride stacked layers. Nano Lett. 11, 2032-2037 (2011). doi: 10.1021/nl200464j; pmid: 21488689
    • (2011) Nano Lett , vol.11 , pp. 2032-2037
    • Liu, Z.1
  • 113
    • 79960570509 scopus 로고    scopus 로고
    • Boron nitride substrates for high mobility chemical vapor deposited graphene
    • W. Gannett et al., Boron nitride substrates for high mobility chemical vapor deposited graphene. Appl. Phys. Lett. 98, 242105 (2011). doi: 10.1063/1.3599708
    • (2011) Appl. Phys. Lett , vol.98
    • Gannett, W.1
  • 114
    • 84948403839 scopus 로고    scopus 로고
    • Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy
    • Z. G. Xu, R. J. Zheng, A. Khanaki, Z. Zuo, J. L. Liu, Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy. Appl. Phys. Lett. 107, 213103 (2015). doi: 10.1063/1.4936378
    • (2015) Appl. Phys. Lett , vol.107
    • Xu, Z.G.1    Zheng, R.J.2    Khanaki, A.3    Zuo, Z.4    Liu, J.L.5
  • 115
    • 84924663868 scopus 로고    scopus 로고
    • Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method
    • pmid: 25735443
    • C. Zhang et al., Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method. Nat. Commun. 6, 6519 (2015). doi: 10.1038/ncomms7519; pmid: 25735443
    • (2015) Nat. Commun , vol.6 , pp. 6519
    • Zhang, C.1
  • 116
    • 84929494430 scopus 로고    scopus 로고
    • In situ synthesis of a large area boron nitride/ graphene monolayer/boron nitride film by chemical vapor deposition
    • pmid: 25864409
    • Q. Wu et al., In situ synthesis of a large area boron nitride/ graphene monolayer/boron nitride film by chemical vapor deposition. Nanoscale 7, 7574-7579 (2015). doi: 10.1039/ C5NR00889A; pmid: 25864409
    • (2015) Nanoscale , vol.7 , pp. 7574-7579
    • Wu, Q.1
  • 117
    • 84934936611 scopus 로고    scopus 로고
    • Van der Waals epitaxy of two-dimensional MoS2-graphene heterostructures in ultrahigh vacuum
    • pmid: 26039108
    • J. A. Miwa et al., van der Waals epitaxy of two-dimensional MoS2-graphene heterostructures in ultrahigh vacuum. ACS Nano 9, 6502-6510 (2015). doi: 10.1021/acsnano.5b02345; pmid: 26039108
    • (2015) ACS Nano , vol.9 , pp. 6502-6510
    • Miwa, J.A.1
  • 118
    • 84862294401 scopus 로고    scopus 로고
    • Van der Waals epitaxy of MoS2 layers using graphene as growth templates
    • pmid: 22642717
    • Y. Shi et al., van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 12, 2784-2791 (2012). doi: 10.1021/nl204562j; pmid: 22642717
    • (2012) Nano Lett , vol.12 , pp. 2784-2791
    • Shi, Y.1
  • 119
    • 84899408264 scopus 로고    scopus 로고
    • Direct synthesis of van der Waals solids
    • pmid: 24641706
    • Y. C. Lin et al., Direct synthesis of van der Waals solids. ACS Nano 8, 3715-3723 (2014). doi: 10.1021/nn5003858; pmid: 24641706
    • (2014) ACS Nano , vol.8 , pp. 3715-3723
    • Lin, Y.C.1
  • 120
    • 84902277236 scopus 로고    scopus 로고
    • Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics
    • pmid: 24810658
    • L. Yu et al., Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics. Nano Lett. 14, 3055-3063 (2014). doi: 10.1021/nl404795z; pmid: 24810658
    • (2014) Nano Lett , vol.14 , pp. 3055-3063
    • Yu, L.1
  • 121
    • 84940101891 scopus 로고    scopus 로고
    • Van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene
    • pmid: 26202730
    • X. Li et al., van der Waals epitaxial growth of two-dimensional single-crystalline GaSe domains on graphene. ACS Nano 9, 8078-8088 (2015). doi: 10.1021/acsnano.5b01943; pmid: 26202730
    • (2015) ACS Nano , vol.9 , pp. 8078-8088
    • Li, X.1
  • 122
    • 84944315765 scopus 로고    scopus 로고
    • Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles
    • pmid: 26317240
    • A. Yan et al., Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles. Nano Lett. 15, 6324-6331 (2015). doi: 10.1021/acs.nanolett.5b01311; pmid: 26317240
    • (2015) Nano Lett , vol.15 , pp. 6324-6331
    • Yan, A.1
  • 123
    • 84930227132 scopus 로고    scopus 로고
    • All chemical vapor deposition growth of MoS2:h-BN vertical van der Waals heterostructures
    • pmid: 25895108
    • S. Wang, X. Wang, J. H. Warner, All chemical vapor deposition growth of MoS2:h-BN vertical van der Waals heterostructures. ACS Nano 9, 5246-5254 (2015). doi: 10.1021/ acsnano.5b00655; pmid: 25895108
    • (2015) ACS Nano , vol.9 , pp. 5246-5254
    • Wang, S.1    Wang, X.2    Warner, J.H.3
  • 124
    • 84931287898 scopus 로고    scopus 로고
    • New strategy for the growth of complex heterostructures based on different 2D materials
    • M. Cattelan et al., New strategy for the growth of complex heterostructures based on different 2D materials. Chem. Mater. 27, 4105-4113 (2015). doi: 10.1021/acs.chemmater.5b01170
    • (2015) Chem. Mater , vol.27 , pp. 4105-4113
    • Cattelan, M.1
  • 125
    • 84953383105 scopus 로고    scopus 로고
    • Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: Phase thermal and chemical stability
    • H. C. Diaz, R. Chaghi, Y. J. Ma, M. Batzill, Molecular beam epitaxy of the van der Waals heterostructure MoTe2 on MoS2: Phase, thermal, and chemical stability. 2D Mater. 2, 044010 (2015). doi: 10.1088/2053-1583/2/4/044010
    • (2015) 2D Mater , vol.2
    • Diaz, H.C.1    Chaghi, R.2    Ma, Y.J.3    Batzill, M.4
  • 126
    • 84920990685 scopus 로고    scopus 로고
    • Vertical and in-plane heterostructures from WS2/MoS2 monolayers
    • pmid: 25262094
    • Y. Gong et al., Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13, 1135-1142 (2014). doi: 10.1038/nmat4091; pmid: 25262094
    • (2014) Nat. Mater , vol.13 , pp. 1135-1142
    • Gong, Y.1
  • 127
    • 84955169025 scopus 로고    scopus 로고
    • Designed synthesis of van der Waals heterostructures: The power of kinetic control
    • M. B. Alemayehu et al., Designed synthesis of van der Waals heterostructures: The power of kinetic control. Angew. Chem. Int. Ed. 54, 15468-15472 (2015). doi: 10.1002/ anie.201506152
    • (2015) Angew. Chem. Int. Ed , vol.54 , pp. 15468-15472
    • Alemayehu, M.B.1
  • 128
    • 84929466745 scopus 로고    scopus 로고
    • High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
    • pmid: 25856730
    • E. Xenogiannopoulou et al., High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy. Nanoscale 7, 7896-7905 (2015). doi: 10.1039/C4NR06874B; pmid: 25856730
    • (2015) Nanoscale , vol.7 , pp. 7896-7905
    • Xenogiannopoulou, E.1
  • 129
    • 84927607936 scopus 로고    scopus 로고
    • Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
    • K. E. Aretouli et al., Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy. Appl. Phys. Lett. 106, 143105 (2015). doi: 10.1063/1.4917422
    • (2015) Appl. Phys. Lett , vol.106
    • Aretouli, K.E.1
  • 130
    • 0000996045 scopus 로고
    • Fabrication of ultrathin heterostructures with van der Waals epitaxy
    • A. Koma, K. Sunouchi, T. Miyajima, Fabrication of ultrathin heterostructures with van der Waals epitaxy. J. Vac. Sci. Technol. B 3, 724 (1985). doi: 10.1116/1.583125
    • (1985) J. Vac. Sci. Technol. B , vol.3 , pp. 724
    • Koma, A.1    Sunouchi, K.2    Miyajima, T.3
  • 131
    • 0001762738 scopus 로고
    • Van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2
    • F. S. Ohuchi, B. A. Parkinson, K. Ueno, A. Koma, van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2. J. Appl. Phys. 68, 2168-2175 (1990). doi: 10.1063/1.346574
    • (1990) J. Appl. Phys , vol.68 , pp. 2168-2175
    • Ohuchi, F.S.1    Parkinson, B.A.2    Ueno, K.3    Koma, A.4
  • 132
    • 84967850146 scopus 로고
    • Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica
    • K. Ueno, K. Saiki, T. Shimada, A. Koma, Epitaxial growth of transition metal dichalcogenides on cleaved faces of mica. J. Vac. Sci. Technol. A 8, 68-72 (1990). doi: 10.1116/1.576983
    • (1990) J. Vac. Sci. Technol. B , vol.8 , pp. 68-72
    • Ueno, K.1    Saiki, K.2    Shimada, T.3    Koma, A.4
  • 133
    • 84916627442 scopus 로고    scopus 로고
    • Atomically thin heterostructures based on single-layer tungsten diselenide and graphene
    • pmid: 25383798
    • Y. C. Lin et al., Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. Nano Lett. 14, 6936-6941 (2014). doi: 10.1021/nl503144a; pmid: 25383798
    • (2014) Nano Lett , vol.14 , pp. 6936-6941
    • Lin, Y.C.1
  • 134
    • 84989324631 scopus 로고    scopus 로고
    • Rotationally commensurate growth of MoS2 on epitaxial graphene
    • pmid: 26565112
    • X. Liu et al., Rotationally commensurate growth of MoS2 on epitaxial graphene. ACS Nano 10, 1067-1075 (2016). doi: 10.1021/acsnano.5b06398; pmid: 26565112
    • (2016) ACS Nano , vol.10 , pp. 1067-1075
    • Liu, X.1
  • 135
    • 84930668029 scopus 로고    scopus 로고
    • Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides
    • pmid: 25885122
    • A. Azizi et al., Freestanding van der Waals heterostructures of graphene and transition metal dichalcogenides. ACS Nano 9, 4882-4890 (2015). doi: 10.1021/acsnano.5b01677; pmid: 25885122
    • (2015) ACS Nano , vol.9 , pp. 4882-4890
    • Azizi, A.1
  • 136
    • 84865461457 scopus 로고    scopus 로고
    • Graphene and boron nitride lateral heterostructures for atomically thin circuitry
    • pmid: 22932386
    • M. P. Levendorf et al., Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Nature 488, 627-632 (2012). doi: 10.1038/nature11408; pmid: 22932386
    • (2012) Nature , vol.488 , pp. 627-632
    • Levendorf, M.P.1
  • 137
    • 85028157514 scopus 로고    scopus 로고
    • Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors
    • pmid: 25150560
    • C. Huang et al., Lateral heterojunctions within monolayer MoSe2-WSe2 semiconductors. Nat. Mater. 13, 1096-1101 (2014). doi: 10.1038/nmat4064; pmid: 25150560
    • (2014) Nat. Mater , vol.13 , pp. 1096-1101
    • Huang, C.1
  • 138
    • 84940529342 scopus 로고    scopus 로고
    • Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
    • pmid: 26228146
    • M. Y. Li et al., Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 349, 524-528 (2015). doi: 10.1126/science.aab4097; pmid: 26228146
    • (2015) Science , vol.349 , pp. 524-528
    • Li, M.Y.1
  • 139
    • 84920945507 scopus 로고    scopus 로고
    • Synthesis of lateral heterostructures of semiconducting atomic layers
    • pmid: 25494614
    • X. Q. Zhang, C. H. Lin, Y. W. Tseng, K. H. Huang, Y. H. Lee, Synthesis of lateral heterostructures of semiconducting atomic layers. Nano Lett. 15, 410-415 (2015). doi: 10.1021/ nl503744f; pmid: 25494614
    • (2015) Nano Lett , vol.15 , pp. 410-415
    • Zhang, X.Q.1    Lin, C.H.2    Tseng, Y.W.3    Huang, K.H.4    Lee, Y.H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.