Van der Waals Epitaxial Growth of Two-Dimensional Single-Crystalline GaSe Domains on Graphene

ACS Nano

Volumn 9, Issue 8, 2015, Pages 8078-8088

  Li, Xufan ^a   Basile, Leonardo ^a,b   Huang, Bing ^a   Ma, Cheng ^a   Lee, Jaekwang ^a   Vlassiouk, Ivan V ^a   Puretzky, Alexander A ^a   Lin, Ming Wei ^a   Yoon, Mina ^a   Chi, Miaofang ^a   Idrobo, Juan C ^a   Rouleau, Christopher M ^a   Sumpter, Bobby G ^a   Geohegan, David B ^a   Xiao, Kai ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b ESCUELA POLITÉCNICA NACIONAL   (Ecuador)

Author keywords

chemical vapor deposition; GaSe; graphene; heterostructures; van der Waals epitaxy

Indexed keywords

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; CRYSTALS; EPITAXIAL GROWTH; GRAIN BOUNDARIES; HETEROJUNCTIONS; LATTICE MISMATCH; OPTICAL LATTICES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; SINGLE CRYSTALS; VAN DER WAALS FORCES;

ARTIFICIALLY STRUCTURED MATERIALS; GASE; LARGE LATTICE MISMATCH; OPTOELECTRONIC PROPERTIES; PREFERRED ORIENTATIONS; SINGLE-CRYSTALLINE DOMAINS; THEORETICAL INVESTIGATIONS; VAN DER WAALS EPITAXY;

GRAPHENE;

EID: 84940101891     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01943     Document Type: Article

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