Stability of edges and extended defects on boron nitride and graphene monolayers: The role of chemical environment

Journal of Physical Chemistry C

Volumn 117, Issue 22, 2013, Pages 11770-11779

  Gomes, L C ^a   Alexandre, S S ^a   Chacham, H ^a   Nunes, R W ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; CALCULATIONS; CHEMICAL BONDS; CHEMICAL POTENTIAL; DEFECTS; ELECTRONIC STRUCTURE; ENERGY GAP; GEOMETRY; GRAPHENE; III-V SEMICONDUCTORS; MONOLAYERS; NITRIDES; STEREOCHEMISTRY;

AB INITIO CALCULATIONS; ANTIPHASE BOUNDARIES; BONDING ENVIRONMENT; CHEMICAL ENVIRONMENT; NANOSTRUCTURE SYNTHESIS; RELATIVE STABILITIES; SOLID-STATE SOURCES; STABILITY TRANSITION;

CHEMICAL STABILITY;

EID: 84879398968     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp400420m     Document Type: Article

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