Electronic structural Moiré pattern effects on MoS 2/MoSe2 2D heterostructures

Nano Letters

Volumn 13, Issue 11, 2013, Pages 5485-5490

  Kang, Jun ^a,b   Li, Jingbo ^a   Li, Shu Shen ^a   Xia, Jian Bai ^a   Wang, Lin Wang ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

2D heterostructure; lattice incommensurateness; Moir pattern; wave function localization

Indexed keywords

2D HETEROSTRUCTURE; CONDUCTION-BAND MINIMUM; ELECTRONIC AND OPTICAL PROPERTIES; FIRST PRINCIPLES METHOD; LATTICE INCOMMENSURATENESS; STACKING CONFIGURATIONS; STRUCTURAL AND ELECTRONIC PROPERTIES; VAN DER WAALS INTERACTIONS;

CALCULATIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; MOLYBDENUM COMPOUNDS; VAN DER WAALS FORCES; WAVE FUNCTIONS;

HETEROJUNCTIONS;

DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; SELENIUM;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; INTERFEROMETRY; METHODOLOGY; OPTICS;

DISULFIDES; MODELS, MOLECULAR; MOIRE TOPOGRAPHY; MOLYBDENUM; OPTICS AND PHOTONICS; SELENIUM;

EID: 84887836437     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4030648     Document Type: Article

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