메뉴 건너뛰기




Volumn 9, Issue 5, 2015, Pages 4882-4890

Freestanding van der waals heterostructures of graphene and transition metal dichalcogenides

Author keywords

atomic and chemical structure; freestanding heterostructures; graphene; MoS2< inf>; transition metal dichalcogenides; transmission electron microscopy; WSe2< inf>

Indexed keywords

ATOMS; CRYSTAL ATOMIC STRUCTURE; ELECTRON MICROSCOPY; ELECTRONS; EPITAXIAL GROWTH; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLYBDENUM COMPOUNDS; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; STRUCTURE (COMPOSITION); TRANSITION METALS; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

EID: 84930668029     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b01677     Document Type: Article
Times cited : (172)

References (42)
  • 3
    • 84877255089 scopus 로고    scopus 로고
    • Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride
    • Gibb, A. L.; Alem, N.; Chen, J.; Erickson, K. J.; Ciston, J.; Gautam, A.; Linck, M.; Zettl, A. Atomic Resolution Imaging of Grain Boundary Defects in Monolayer Chemical Vapor Deposition-Grown Hexagonal Boron Nitride J. Am. Chem. Soc. 2013, 135, 6758-6761
    • (2013) J. Am. Chem. Soc. , vol.135 , pp. 6758-6761
    • Gibb, A.L.1    Alem, N.2    Chen, J.3    Erickson, K.J.4    Ciston, J.5    Gautam, A.6    Linck, M.7    Zettl, A.8
  • 5
    • 84881167566 scopus 로고    scopus 로고
    • Van der Waals Heterostructures
    • Geim, A. K.; Grigorieva, I. V. van der Waals Heterostructures Nature 2013, 499, 419-25
    • (2013) Nature , vol.499 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2
  • 12
    • 84902435761 scopus 로고    scopus 로고
    • Active Edge Sites in MoSe2 and WSe2 Catalysts for the Hydrogen Evolution Reaction: A Density Functional Study
    • Tsai, C.; Chan, K.; Abild-Pedersen, F.; Nørskov, J. K. Active Edge Sites in MoSe2 and WSe2 Catalysts for the Hydrogen Evolution Reaction: A Density Functional Study Phys. Chem. Chem. Phys. 2014, 16, 13156-13164
    • (2014) Phys. Chem. Chem. Phys. , vol.16 , pp. 13156-13164
    • Tsai, C.1    Chan, K.2    Abild-Pedersen, F.3    Nørskov, J.K.4
  • 14
    • 84880170250 scopus 로고    scopus 로고
    • MoSe2 and WSe2 Nanofilms with Vertically Aligned Molecular Layers on Curved and Rough Surfaces
    • Wang, H.; Kong, D.; Johanes, P.; Cha, J. J.; Zheng, G.; Yan, K.; Liu, N.; Cui, Y. MoSe2 and WSe2 Nanofilms with Vertically Aligned Molecular Layers on Curved and Rough Surfaces Nano Lett. 2013, 13, 3426-3433
    • (2013) Nano Lett. , vol.13 , pp. 3426-3433
    • Wang, H.1    Kong, D.2    Johanes, P.3    Cha, J.J.4    Zheng, G.5    Yan, K.6    Liu, N.7    Cui, Y.8
  • 15
    • 34447326950 scopus 로고    scopus 로고
    • Identification of Active Edge Sites for Electrochemical H2 Evolution from MoS2 Nanocatalysts
    • Jaramillo, T. F.; Jørgensen, K. P.; Bonde, J.; Nielsen, J. H.; Horch, S.; Chorkendorff, I. Identification of Active Edge Sites for Electrochemical H2 Evolution from MoS2 Nanocatalysts Science 2007, 317, 100-102
    • (2007) Science , vol.317 , pp. 100-102
    • Jaramillo, T.F.1    Jørgensen, K.P.2    Bonde, J.3    Nielsen, J.H.4    Horch, S.5    Chorkendorff, I.6
  • 20
    • 84875886821 scopus 로고    scopus 로고
    • Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
    • Choi, M. S.; Lee, G.-H.; Yu, Y.-J.; Lee, D.-Y.; Lee, S. H.; Kim, P.; Hone, J.; Yoo, W. J. Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices Nat. Commun. 2013, 4, 1624
    • (2013) Nat. Commun. , vol.4 , pp. 1624
    • Choi, M.S.1    Lee, G.-H.2    Yu, Y.-J.3    Lee, D.-Y.4    Lee, S.H.5    Kim, P.6    Hone, J.7    Yoo, W.J.8
  • 22
    • 84907978510 scopus 로고    scopus 로고
    • Two-Dimensional Layered Semiconductor/Graphene Heterostructures for Solar Photovoltaic Applications
    • Shanmugam, M.; Jacobs-Gedrim, R.; Song, E. S.; Yu, B. Two-Dimensional Layered Semiconductor/Graphene Heterostructures for Solar Photovoltaic Applications Nanoscale 2014, 6, 12682-12689
    • (2014) Nanoscale , vol.6 , pp. 12682-12689
    • Shanmugam, M.1    Jacobs-Gedrim, R.2    Song, E.S.3    Yu, B.4
  • 24
    • 84904629479 scopus 로고    scopus 로고
    • Graphene/MoS2 Heterostructures for Ultrasensitive Detection of DNA Hybridisation
    • Loan, P. T. K.; Zhang, W.; Lin, C.-T.; Wei, K.-H.; Li, L.-J.; Chen, C.-H. Graphene/MoS2 Heterostructures for Ultrasensitive Detection of DNA Hybridisation Adv. Mater. 2014, 26, 4838-4844
    • (2014) Adv. Mater. , vol.26 , pp. 4838-4844
    • Loan, P.T.K.1    Zhang, W.2    Lin, C.-T.3    Wei, K.-H.4    Li, L.-J.5    Chen, C.-H.6
  • 25
    • 84883252748 scopus 로고    scopus 로고
    • Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet
    • Hui, Y. Y.; Liu, X.; Jie, W.; Chan, N. Y.; Hao, J.; Hsu, Y.-T.; Li, L.-J.; Guo, W.; Lau, S. P. Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet ACS Nano 2013, 7, 7126-7131
    • (2013) ACS Nano , vol.7 , pp. 7126-7131
    • Hui, Y.Y.1    Liu, X.2    Jie, W.3    Chan, N.Y.4    Hao, J.5    Hsu, Y.-T.6    Li, L.-J.7    Guo, W.8    Lau, S.P.9
  • 29
    • 84930624351 scopus 로고    scopus 로고
    • Rapid, Non-destructive Evaluation of Ultrathin WSe2 Using Spectroscopic Ellipsometry
    • Eichfeld, S. M.; Eichfeld, C. M.; Lin, Y.-C.; Hossain, L.; Robinson, J. A. Rapid, Non-destructive Evaluation of Ultrathin WSe2 Using Spectroscopic Ellipsometry APL Mater. 2014, 2, 092508
    • (2014) APL Mater. , vol.2 , pp. 092508
    • Eichfeld, S.M.1    Eichfeld, C.M.2    Lin, Y.-C.3    Hossain, L.4    Robinson, J.A.5
  • 33
    • 0002784212 scopus 로고
    • Van der Waals Epitaxy-A New Epitaxial Growth Method for a Highly Lattice-Mismatched System
    • Koma, A. van der Waals Epitaxy-A New Epitaxial Growth Method for a Highly Lattice-Mismatched System Thin Solid Films 1992, 216, 72-76
    • (1992) Thin Solid Films , vol.216 , pp. 72-76
    • Koma, A.1
  • 34
    • 84918249181 scopus 로고
    • The Transition Metal Dichalcogenides Discussion and Interpretation of the Observed Optical, Electrical and Structural Properties
    • Wilson, J. A.; Yoffe, A. D. The Transition Metal Dichalcogenides Discussion and Interpretation of the Observed Optical, Electrical and Structural Properties Adv. Phys. 1969, 18, 193-335
    • (1969) Adv. Phys. , vol.18 , pp. 193-335
    • Wilson, J.A.1    Yoffe, A.D.2
  • 37
    • 84875654552 scopus 로고    scopus 로고
    • Mechanical Exfoliation and Characterization of Single- and Few-Layer Nanosheets of WSe2, TaS2, and TaSe2
    • Li, H.; Lu, G.; Wang, Y.; Yin, Z.; Cong, C.; He, Q.; Wang, L.; Ding, F.; Yu, T.; Zhang, H. Mechanical Exfoliation and Characterization of Single- and Few-Layer Nanosheets of WSe2, TaS2, and TaSe2 Small 2013, 9, 1974-1981
    • (2013) Small , vol.9 , pp. 1974-1981
    • Li, H.1    Lu, G.2    Wang, Y.3    Yin, Z.4    Cong, C.5    He, Q.6    Wang, L.7    Ding, F.8    Yu, T.9    Zhang, H.10
  • 38
    • 84914177051 scopus 로고    scopus 로고
    • Maintaining the Genuine Structure of 2D Materials and Catalytic Nanoparticles at Atomic Resolution
    • Calderon, H. A.; Kisielowski, C.; Specht, P.; Barton, B.; Godinez-Salomon, F.; Solorza-Feria, O. Maintaining the Genuine Structure of 2D Materials and Catalytic Nanoparticles at Atomic Resolution Micron 2015, 68, 164-175
    • (2015) Micron , vol.68 , pp. 164-175
    • Calderon, H.A.1    Kisielowski, C.2    Specht, P.3    Barton, B.4    Godinez-Salomon, F.5    Solorza-Feria, O.6
  • 41
    • 84879221321 scopus 로고    scopus 로고
    • Heterogeneous Integration of Hexagonal Boron Nitride on Bilayer Quasi-Free-Standing Epitaxial Graphene and Its Impact on Electrical Transport Properties
    • Hollander, M. J.; Agrawal, A.; Bresnehan, M. S.; LaBella, M.; Trumbull, K. A.; Cavalero, R.; Snyder, D. W.; Datta, S.; Robinson, J. A. Heterogeneous Integration of Hexagonal Boron Nitride on Bilayer Quasi-Free-Standing Epitaxial Graphene and Its Impact on Electrical Transport Properties Phys. Status Solidi 2013, 210, 1062-1070
    • (2013) Phys. Status Solidi , vol.210 , pp. 1062-1070
    • Hollander, M.J.1    Agrawal, A.2    Bresnehan, M.S.3    Labella, M.4    Trumbull, K.A.5    Cavalero, R.6    Snyder, D.W.7    Datta, S.8    Robinson, J.A.9
  • 42
    • 77957707136 scopus 로고    scopus 로고
    • Effect of High-κ Gate Dielectrics on Charge Transport in Graphene-Based Field Effect Transistors
    • Konar, A.; Fang, T.; Jena, D. Effect of High-κ Gate Dielectrics on Charge Transport in Graphene-Based Field Effect Transistors Phys. Rev. B 2010, 82, 115452
    • (2010) Phys. Rev. B , vol.82 , pp. 115452
    • Konar, A.1    Fang, T.2    Jena, D.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.