Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

Applied Physics Letters

Volumn 106, Issue 14, 2015, Pages

  Aretouli, K E ^a   Tsipas, P ^a   Tsoutsou, D ^a   Marquez Velasco, J ^a   Xenogiannopoulou, E ^a   Giamini, S A ^a   Vassalou, E ^a   Kelaidis, N ^a   Dimoulas, A ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SELENIUM COMPOUNDS; VAN DER WAALS FORCES;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY; ELECTRONIC BAND STRUCTURE; FIRST-PRINCIPLES CALCULATION; HETERO INTERFACES; SURFACE TUNNELING MICROSCOPY; TWO-DIMENSIONAL SEMICONDUCTORS; VALENCE BAND OFFSETS; WORK-FUNCTION DIFFERENCE;

HETEROJUNCTIONS;

EID: 84927607936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4917422     Document Type: Article

References (22)

1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nat. Nanotechnol. 7, 699 (2012). 10.1038/nnano.2012.193
2. B. Radisavljevic, M. B. Whitwick, and A. Kis, ACS Nano 5, 9934 (2011). 10.1021/nn203715c
3. H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, Nano Lett. 12, 4674 (2012). 10.1021/nl302015v
4. A. K. Geim and I. V. Grigorieva, Nature 499, 419 (2013). 10.1038/nature12385
5. M. Chhowalla, H. S. Shin, G. Eda, L.-J. Li, K. P. Loh, and H. Zhang, Nat. Chem. 5, 263 (2013). 10.1038/nchem.1589
6. C. Gong, H. Zhang, W. Wang, L. Colombo, R. M. Wallace, and K. Cho, Appl. Phys. Lett. 103, 053513 (2013). 10.1063/1.4817409
7. A. H. Reshak and S. Auluck, Physica B 363, 25 (2005). 10.1016/j.physb.2005.02.030
8. H. Jiang, J. Chem. Phys. 134, 204705 (2011). 10.1063/1.3594205
9. C. Gaiser, T. Zandt, A. Krapf, R. Serverin, C. Janowitz, and R. Manzke, Phys. Rev. B 69, 075205 (2004). 10.1103/PhysRevB.69.075205
10. A. Aruchamy, Photoelectrochemisty and Photovoltaics of Layered Semiconductors (Kluwer Academic Publisher, 1992), p. 322.
11. W. Zhang, Z. Huang, W. Zhang, and Y. Li, Nano Res. 7, 1731 (2014). 10.1007/s12274-014-0532-x
12. M. Li, D. Esseni, G. Snider, D. Jena, and H. G. Xing, J. Appl. Phys. 115, 074508 (2014). 10.1063/1.4866076
13. R. Yue, A. T. Barton, H. Zhu, A. Azcatl, L. F. Pena, J. Wang, X. Peng, N. Lu, L. Cheng, R. Addou, S. McDonnell, L. Colombo, J. W. P. Hsu, J. Kim, M. J. Kim, R. M. Wallace, and C. L. Hinkle, ACS Nano 9, 474 (2015). 10.1021/nn5056496
14. 2 and MoSe2, and XPS to calculate band offsets by Kraut's method.
15. 3heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy," Nanoscale (published online) 10.1039/c4nr06874b.
16. R. Coehoorn, C. Haas, J. Dijkstra, C. J. F. Flipse, R. A. de Groot, and A. Wold, Phys. Rev. B 35, 6195 (1987). 10.1103/PhysRevB.35.6195
17. F. S. Ohuchi, B. A. Parkinson, K. Ueno, and A. Koma, J. Appl. Phys. 68, 2168 (1990). 10.1063/1.346574
18. B. A. Parkinson, F. S. Ohuchi, K. Ueno, and A. Koma, Appl. Phys. Lett. 58, 472 (1991) 10.1063/1.104611.
19. S. Lebegue, T. Bjorkman, M. Klintenberg, R. M. Nieminen, and O. Eriksson, Phys. Rev. X 3, 031002 (2013) 10.1103/PhysRevX.3.031002.
20. E. Kraut, R. Grant, J. Waldrop, and S. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980). 10.1103/PhysRevLett.44.1620
21. M.-H. Chiu, C. Zhang, H. W. Shiu, C. Chuu, C.-H. Chen, C.-Y. S. Chang, C. Chen, M. Chou, C. Shih, and L. Li, " Determination of band alignment in transition metal dichalcogenides heterojunctions," e-print arXiv:1406.5137.
22. C.-H. Lee, G.-H. Lee, A. M. van der Zante, W. Chen, Y. Li, M. Han, X. Cui, G. Arefe, C. Nuckolls, T. F. Heinz, J. Cao, J. Hone, and P. Kim, Nat. Nanotechnol. 9, 676 (2014). 10.1038/nnano.2014.150