Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures

Nature Communications

Volumn 6, Issue , 2015, Pages

  Lin, Yu Chuan ^a   Ghosh, Ram Krishna ^b   Addou, Rafik ^c   Lu, Ning ^c   Eichfeld, Sarah M ^a   Zhu, Hui ^c   Li, Ming Yang ^d   Peng, Xin ^c   Kim, Moon J ^c   Li, Lain Jong ^e   Wallace, Robert M ^c   Datta, Suman ^b   Robinson, Joshua A ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b The Pennsylvania State University   (United States)

^c The University of Texas at Dallas   (United States)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^e KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

DISULFIDE; GRAPHENE; MOLYBDENUM; MOLYBDENUM DISELENIDE; MOLYBDENUM DISULFIDE; SELENIDE; TRANSITION ELEMENT; TUNGSTEN; TUNGSTEN DISELENIDE; UNCLASSIFIED DRUG;

CARBON; ELECTRICAL PROPERTY; ELECTRODE; ELECTRON; FORCE; HETEROGENEITY; INORGANIC COMPOUND; OPTICAL PROPERTY; QUANTUM MECHANICS; TRANSITION ELEMENT;

ARTICLE; ATOMIC FORCE MICROSCOPY; DIODE; ION EXCHANGE; PHOTOLUMINESCENCE; RAMAN SPECTROMETRY; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY; SCINTISCANNING; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84934964778     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms8311     Document Type: Article

References (49)

1. Esaki, L. New phenomenon in narrow germanium p-n Junctions. Phys. Rev. 109, 603-604 (1958).
2. Esaki, L. & Tsu, R. Superlattice and negative differential conductivity in semiconductors. IBM J. Res. Dev. 14, 61-65 (1970).
3. Mitin, V. V., Kochelap, V. & Stroscio, M. A. Quantum Heterostructures: Microelectronics and Optoelectronics (Cambridge Univ. Press, 1999).
4. Chan, H. L., Mohan, S., Mazumder, P. & Haddad, G. I. Compact multiple-valued multiplexers using negative differential resistance devices. IEEE J. Solid-State Circuits 31, 1151-1156 (1996).
5. Bayram, C., Vashaei, Z. & Razeghi, M. AlN/GaN double-barrier resonant tunnelling diodes grown by metal-organic chemical vapor deposition. Appl. Phys. Lett. 96, 042103 (2010).
6. Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004).
7. Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451-10453 (2005).
8. Geim, A. K. & Grigorieva, I. V. Van der Waals heterostructures. Nature 499, 419-425 (2013).
9. Zhan, Y., Liu, Z., Najmaei, S., Ajayan, P. M. & Lou, J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 8, 966-971 (2012).
10. Lee, Y.-H. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 24, 2320-2325 (2012).
11. Gutiérrez, H. R. et al. Extraordinary room-temperature photoluminescence in triangular WS2 monolayers. Nano Lett. 13, 3447-3454 (2013).
12. Liu, K.-K. et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 12, 1538-1544 (2012).
13. Zhang, Y. et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nat. Nanotechnol. 9, 111-115 (2014).
14. Ugeda, M. M. et al. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor. Nat. Mater. 13, 1091-1095 (2014).
15. Terrones, H., López-Urías, F. & Terrones, M. Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides. Sci. Rep. 3, 1549 (2013).
16. Gao, G. et al. Artificially stacked atomic layers: toward new van der Waals solids. Nano Lett. 12, 3518-3525 (2012).
17. Roy, T. et al. Field-effect transistors built from all two-dimensional material components. ACS Nano 8, 6259-6264 (2014).
18. Britnell, L. et al. Field-effect tunnelling transistor based on vertical graphene heterostructures. Science 335, 947-950 (2012).
19. Haigh, S. J. et al. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices. Nat. Mater. 11, 764-767 (2012).
20. Fang, H. et al. Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides. Proc. Natl Acad. Sci. USA 111, 6198-6202 (2014).
21. Rivera, P. et al. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures. Nat. Commun. 6, 6242 (2015).
22. Chiu, M.-H. et al. Spectroscopic signatures for interlayer coupling in MoS2-WSe2 van der Waals stacking. ACS Nano 8, 9649-9656 (2014).
23. Robinson, J. A. et al. Epitaxial graphene transistors: enhancing performance via hydrogen intercalation. Nano Lett. 11, 3875-3880 (2011).
24. Huang, J.-K. et al. Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 8, 923-930 (2014).
25. Eichfeld, S. M. et al. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. ACS Nano 9, 2080-2087 (2015).
26. Lin, Y.-C. et al. Direct synthesis of van der Waals solids. ACS Nano 8, 3715-3723 (2014).
27. Su, S.-H. et al. Band gap-tunable molybdenum sulfide selenide monolayer alloy. Small 10, 2589-2594 (2014).
28. Lee, G.-H. et al. Electron tunnelling through atomically flat and ultrathin hexagonal boron nitride. Appl. Phys. Lett. 99, 243114 (2011).
29. Gong, Y. et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 13, 1135-1142 (2014).
30. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699-712 (2012).
31. Chiu, M.-H. et al.Determination of band alignment in transition metal dichalcogenides heterojunctions (2014; Preprint at ohttp://arxiv.org/abs/1406.51374).
32. Yang, W. et al. Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat. Mater. 12, 792-797 (2013).
33. Parkinson, B. A., Ohuchi, F. S., Ueno, K. & Koma, A. Periodic lattice distortions as a result of lattice mismatch in epitaxial films of two-dimensional materials. Appl. Phys. Lett. 58, 472-474 (1991).
34. Klein, A., Tiefenbacher, S., Eyert, V., Pettenkofer, C. & Jaegermann, W. Electronic band structure of single-crystal and single-layer WS2: Influence of interlayer van der Waals interactions. Phys. Rev. B 64, 205416 (2001).
35. Zhang, C., Johnson, A., Hsu, C.-L., Li, L.-J. & Shih, C.-K. Direct imaging of band profile in single layer MoS2 on graphite: quasiparticle energy gap, metallic edge states, and edge band bending. Nano Lett. 14, 2443-2447 (2014).
36. Rawlett, A. M. et al. Electrical measurements of a dithiolated electronic molecule via conducting atomic force microscopy. Appl. Phys. Lett. 81, 3043-3045 (2002).
37. Georgiou, T. et al. Vertical field-effect transistor based on graphene-WS2 heterostructures for flexible and transparent electronics. Nat. Nanotechnol. 8, 100-103 (2013).
38. Roy, T. et al. Dual-gated MoS2/WSe2 van der waals tunnel diodes and transistors. ACS Nano 9, 2071-2079 (2015).
39. Lee, C.-H. et al. Atomically thin p-n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 676-681 (2014).
40. Smet, J. H., Broekaert, T. P. E. & Fonstad, C. G. Peak-to-valley current ratios as high as 50:1 at room temperature in pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunnelling diodes. J. Appl. Phys. 71, 2475 (1992).
41. Day, D. J., Yang, R. Q., Lu, J. & Xu, J. M. Experimental demonstration of resonant interband tunnel diode with room temperature peak-to-valley current ratio over 100. J. Appl. Phys. 73, 1542 (1993).
42. Su, Y.-K. et al. Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunnelling diode. Solid-State Electron. 46, 1109-1111 (2002).
43. Tsai, H. H., Su, Y. K., Lin, H. H., Wang, R. L. & Lee, T. L. P-N double quantum well resonant interband tunnelling diode with peak-to-valley current ratio of 144 at room temperature. IEEE Electron Dev. Lett. 15, 357-359 (1994).
44. Evers, N. et al. Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunnelling diodes integrated onto Si substrates. IEEE Electron Dev. Lett. 17, 443-445 (1996).
45. Rommel, S. L. et al. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities. IEEE Electron Dev. Lett. 20, 329-331 (1999).
46. See, P. et al. High performance Si/Si1-x/Gex resonant tunnelling diodes. IEEE Electron Dev. Lett. 22, 182-184 (2001).
47. Jin, N. et al. Diffusion barrier cladding in Si/SiGe resonant interband tunnelling diodes and their patterned growth on PMOS source/drain regions. IEEE Trans. Electron Dev. 50, 1876-1884 (2003).
48. Britnell, L. et al. Resonant tunnelling and negative differential conductance in graphene transistors. Nat. Commun. 4, 1794 (2013).
49. Mishchenko, A. et al. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nat. Nanotechnol. 9, 808-813 (2014).