Rotationally commensurate growth of MoS2 on epitaxial graphene

ACS Nano

Volumn 10, Issue 1, 2016, Pages 1067-1075

  Liu, Xiaolong ^a   Balla, Itamar ^b   Bergeron, Hadallia ^b   Campbell, Gavin P ^b   Bedzyk, Michael J ^a,b   Hersam, Mark C ^a,b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b Northwestern University   (United States)

Author keywords

Chemical vapor deposition; Scanning tunneling microscopy; Silicon carbide; Synchrotron X ray scattering; Transition metal dichalcogenide; Van der Waals heterostructure

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; ENERGY GAP; GRAPHENE; HETEROJUNCTIONS; MOLYBDENUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE; SILICON WAFERS; TRANSITION METALS; VAN DER WAALS FORCES; VAPOR DEPOSITION; X RAY SCATTERING;

CONSTITUENT MATERIALS; GRAPHENE SUBSTRATES; HIGH-ELECTRONIC-QUALITY; OPTOELECTRONIC TECHNOLOGY; SCANNING TUNNELING SPECTROSCOPY; SYNCHROTRON X-RAY SCATTERING; TRANSITION METAL DICHALCOGENIDES; VAN DER WAALS;

SUBSTRATES;

EID: 84989324631     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b06398     Document Type: Article

References (65)

1. Reina, A.; Jia, X.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition. Nano Lett. 2009, 9, 30-35.
2. Emery, J. D.; Wheeler, V. H.; Johns, J. E.; McBriarty, M. E.; Detlefs, B.; Hersam, M. C.; Gaskill, D. K.; Bedzyk, M. J. Structural Consequences of Hydrogen Intercalation of Epitaxial Graphene on SiC(0001). Appl. Phys. Lett. 2014, 105, 161602.
3. Song, L.; Ci, L.; Lu, H.; Sorokin, P. B.; Jin, C.; Ni, J.; Kvashnin, A. G.; Kvashnin, D. G.; Lou, J.; Yakobson, B. I.; et al. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers. Nano Lett. 2010, 10, 3209-3215.
4. 3 with a Single Dirac Cone on the Surface. Nat. Phys. 2009, 5, 438-442.
5. Wood, J. D.; Wells, S. A.; Jariwala, D.; Chen, K.-S.; Cho, E.; Sangwan, V. K.; Liu, X.; Lauhon, L. J.; Marks, T. J.; Hersam, M. C. Effective Passivation of Exfoliated Black Phosphorus Transistors Against Ambient Degradation. Nano Lett. 2014, 14, 6964-6970.
6. Liu, X.; Wood, J. D.; Chen, K.-S.; Cho, E.; Hersam, M. C. In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus. J. Phys. Chem. Lett. 2015, 6, 773-778.
7. Kang, J.; Wood, J. D.; Wells, S. A.; Lee, J.-H.; Liu, X.; Chen, K.-S.; Hersam, M. C. Solvent Exfoliation of Electronic-Grade, Two-Dimensional Black Phosphorus. ACS Nano 2015, 9, 3596-3604.
8. Kang, J.; Seo, J.-W. T.; Alducin, D.; Ponce, A.; Yacaman, M. J.; Hersam, M. C. Thickness Sorting of Two-Dimensional Transition Metal Dichalcogenides via Copolymer-Assisted Density Gradient Ultracentrifugation. Nat. Commun. 2014, 5, 5478.
9. 2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending. Nano Lett. 2014, 14, 2443-2447.
10. 2 Layers Using Graphene as Growth Templates. Nano Lett. 2012, 12, 2784-2791.
11. 2 Hybrid Technology for Large-Scale Two-Dimensional Electronics. Nano Lett. 2014, 14, 3055-3063.
12. 2 Hybrid Structures for Multifunctional Photoresponsive Memory Devices. Nat. Nanotechnol. 2013, 8, 826-830.
13. 2 Nanoparticles Grown on Graphene: An Advanced Catalyst for the Hydrogen Evolution Reaction. J. Am. Chem. Soc. 2011, 133, 7296-7299.
14. 2/Graphene Composites with Excellent Electrochemical Performances for Lithium Ion Batteries. ACS Nano 2011, 5, 4720-4728.
15. Alaboson, J. M. P.; Wang, Q. H.; Emery, J. D.; Lipson, A. L.; Bedzyk, M. J.; Elam, J. W.; Pellin, M. J.; Hersam, M. C. Seeding Atomic Layer Deposition of High-k Dielectrics on Epitaxial Graphene with Organic Self-Assembled Monolayers. ACS Nano 2011, 5, 5223-5232.
16. Karmel, H. J.; Garramone, J. J.; Emery, J. D.; Kewalramani, S.; Bedzyk, M. J.; Hersam, M. C. Self-Assembled Organic Monolayers on Epitaxial Graphene with Enhanced Structural and Thermal Stability. Chem. Commun. 2014, 50, 8852-8855.
17. Emtsev, K. V.; Bostwick, A.; Horn, K.; Jobst, J.; Kellogg, G. L.; Ley, L.; McChesney, J. L.; Ohta, T.; Reshanov, S. A.; Rohrl, J.; et al. Towards Wafer-Size Graphene Layers by Atmospheric Pressure Graphitization of Silicon Carbide. Nat. Mater. 2009, 8, 203-207.
18. Celebi, C.; Yanik, C.; Demirkol, A. G.; Kaya, I. I. The Effect of a SiC Cap on the Growth of Epitaxial Graphene on SiC in Ultra High Vacuum. Carbon 2012, 50, 3026-3031.
19. Norimatsu, W.; Kusunoki, M. Transitional Structures of the Interface Between Graphene and 6H-SiC (0001). Chem. Phys. Lett. 2009, 468, 52-56.
20. Tanabe, S.; Sekine, Y.; Kageshima, H.; Nagase, M.; Hibino, H. Carrier Transport Mechanism in Graphene on SiC(0001). Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 84, 115458.
21. Jobst, J.; Waldmann, D.; Speck, F.; Hirner, R.; Maude, D. K.; Seyller, T.; Weber, H. B. Quantum Oscillations and Quantum Hall Effect in Epitaxial Graphene. Phys. Rev. B: Condens. Matter Mater. Phys. 2010, 81, 195434.
22. Riedl, C.; Coletti, C.; Iwasaki, T.; Zakharov, A. A.; Starke, U. Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation. Phys. Rev. Lett. 2009, 103, 246804.
23. Fukidome, H.; Kawai, Y.; Fromm, F.; Kotsugi, M.; Handa, H.; Ide, T.; Ohkouchi, T.; Miyashita, H.; Enta, Y.; Kinoshita, T.; et al. Precise Control of Epitaxy of Graphene by Microfabricating SiC Substrate. Appl. Phys. Lett. 2012, 101, 041605.
24. Eriksson, J.; Pearce, R.; Iakimov, T.; Virojanadara, C.; Gogova, D.; Andersson, M.; Syvajarvi, M.; Lloyd Spetz, A.; Yakimova, R. The Influence of Substrate Morphology on Thickness Uniformity and Unintentional Doping of Epitaxial Graphene on SiC. Appl. Phys. Lett. 2012, 100, 241607.
25. Ugeda, M. M.; Bradley, A. J.; Shi, S.-F.; da Jornada, F. H.; Zhang, Y.; Qiu, D. Y.; Ruan, W.; Mo, S.-K.; Hussain, Z.; Shen, Z.-X.; et al. Giant Bandgap Renormalization and Excitonic Effects in a Monolayer Transition Metal Dichalcogenide Semiconductor. Nat. Mater. 2014, 13, 1091-1095.
26. 2. Nat. Nanotechnol. 2013, 9, 111-115.
27. Huang, Y. L.; Chen, Y.; Zhang, W.; Quek, S. Y.; Chen, C.-H.; Li, L.-J.; Hsu, W.-T.; Chang, W.-H.; Zheng, Y. J.; Chen, W.; et al. Bandgap Tunability at Single-Layer Molybdenum Disulphide Grain Boundaries. Nat. Commun. 2015, 6, 6298.
28. 2 Crystal Orientation. Appl. Phys. Lett. 2015, 106, 181904.
29. Lin, Y.-C.; Lu, N.; Perea-Lopez, N.; Li, J.; Lin, Z.; Peng, X.; Lee, C. H.; Sun, C.; Calderin, L.; Browning, P. N.; et al. Direct Synthesis of van der Waals Solids. ACS Nano 2014, 8, 3715-3723.
30. 2-Graphene Heterostructures in a Ultra-High Vacuum. ACS Nano 2015, 9, 6502-6510.
31. Koma, A.; Yoshimura, K. Ultrasharp Interfaces Grown with van der Waals Epitaxy. Surf. Sci. 1986, 174, 556-560.
32. Koma, A. Van der Waals Epitaxy for Highly Lattice-Mismatched Systems. J. Cryst. Growth 1999, 201-202, 236-241.
33. 2. Sci. Rep. 2013, 3, 2209.
34. van der Zande, A. M. Grains and Grain Boundaries in Highly Crystalline Monolayer Molybdenum Disulphide. Nat. Mater. 2013, 12, 554-561.
35. 2. Nat. Nano-technol. 2015, 10, 403-406.
36. Rutter, G. M.; Crain, J. N.; Guisinger, N. P.; Li, T.; First, P. N.; Stroscio, J. A. Scattering and Interference in Epitaxial Graphene. Science 2007, 317, 219-222.
37. Cockayne, E.; Rutter, G. M.; Guisinger, N. P.; Crain, J. N.; First, P. N.; Stroscio, J. A. Grain Boundary Loops in Graphene. Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 83, 195425.
38. 2. Nat. Nanotechnol. 2013, 8, 497-501.
39. Poon, S. W.; Chen, W.; Wee, A. T. S.; Tok, E. S. Growth Dynamics and Kinetics of Monolayer and Multilayer Graphene on a 6H-SiC(0001) Substrate. Phys. Chem. Chem. Phys. 2010, 12, 13522-13533.
40. Zhang, Y.; Fu, Q.; Cui, Y.; Mu, R.; Jin, L.; Bao, X. Enhanced Reactivity of Graphene Wrinkles and Their Function as Nanosized Gas Inlets for Reactions Under Graphene. Phys. Chem. Chem. Phys. 2013, 15, 19042-19048.
41. Kim, K. K.; Reina, A.; Shi, Y.; Park, H.; Li, L.-J.; Lee, Y. H.; Kong, J. Enhancing the Conductivity of Transparent Graphene Films via Doping. Nanotechnology 2010, 21, 285205.
42. Sharma, R.; Baik, J. H.; Perera, C. J.; Strano, M. S. Anomalously Large Reactivity of Single Graphene Layers and Edges Toward Electron Transfer Chemistries. Nano Lett. 2010, 10, 398-405.
43. 2 Nanocrystals. J. Phys. Chem. C 2014, 118, 22768-22773.
44. 2/Si by Chemical Vapor Deposition. RSC Adv. 2013, 3, 17287-17293.
45. 2. ACS Nano 2010, 4, 2695-2700.
46. 2 Sheet. ACS Nano 2013, 7, 7126-7131.
47. 2 transistor. Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 161403.
48. Lee, J. E.; Ahn, G.; Shim, J.; Lee, Y. S.; Ryu, S. Optical Separation of Mechanical Strain from Charge Doping in Graphene. Nat. Commun. 2012, 3, 1024.
49. 2. Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 081307.
50. 2. Nano Lett. 2013, 13, 5361-5366.
51. Bernardi, M.; Palummo, M.; Grossman, J. C. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials. Nano Lett. 2013, 13, 3664-3670.
52. 2 substrate. Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 165402.
53. 2 Atomic Layers Grown by Chemical Vapour Deposition. Nat. Commun. 2014, 5, 5246.
54. Foley, E. T.; Yoder, N. L.; Guisinger, N. P.; Hersam, M. C. Cryogenic Variable Temperature Ultrahigh Vacuum Scanning Tunneling Microscope for Single Molecule Studies on Silicon Surfaces. Rev. Sci. Instrum. 2004, 75, 5280-5287.
55. Chen, C. J. Introduction to Scanning Tunneling Microscopy; Oxford University Press: New York, 1993; pp 196-198.
56. Maroutian, T.; Degen, S.; Becker, C.; Wandelt, K.; Berndt, R. Superstructures and Coincidences of a Thin Oxide Film on a Metallic Substrate: A STM Study. Phys. Rev. B: Condens. Matter Mater. Phys. 2003, 68, 155414.
57. 2 Nanoparticles. J. Phys. Chem. C 2007, 111, 16192-16196.
58. 2. Phys. Rev. Lett. 2001, 87, 196803.
59. 2 Under Uniaxial Strain. J. Appl. Phys. 2015, 117, 244303.
60. Van Bommel, A. J.; Crombeen, J. E.; Van Tooren, A. LEED and Auger Electron Observations of the SiC(0001) Surface. Surf. Sci. 1975, 48, 463-472.
61. 2 Domains on Sapphire. Nano Lett. 2015, 15, 198-205.
62. Bakti Utama, M. I.; Zhang, Q.; Zhang, J.; Yuan, Y.; Belarre, F. J.; Arbiol, J.; Xiong, Q. Recent Developments and Future Directions in the Growth of Nanostructures by van der Waals Epitaxy. Nanoscale 2013, 5, 3570-3588.
63. 2. ACS Nano 2015, 9, 4611-4620.
64. Brockenbrough, R. T.; Lyding, J. W. Inertial Tip Translator for a Scanning Tunneling Microscope. Rev. Sci. Instrum. 1993, 64, 2225-2228.
65. Lin, S.; Chen, Z.; Li, L.; Yang, C. Effect of Impurities on the Raman Scattering of 6H-SiC Crystals. Mater. Res. 2012, 15, 833-836.