Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Nature Materials

Volumn 14, Issue 4, 2015, Pages 421-425

  Woessner, Achim ^a   Lundeberg, Mark B ^a   Gao, Yuanda ^b   Principi, Alessandro ^c   Alonso González, Pablo ^d   Carrega, Matteo ^e,f   Watanabe, Kenji ^g   Taniguchi, Takashi ^g   Vignale, Giovanni ^c   Polini, Marco ^e,h   Hone, James ^b   Hillenbrand, Rainer ^i,j   Koppens, Frank H L ^a  

^a ICFO INSTITUT DE CIENCIES FOTONIQUES   (Spain)

^b Columbia University ^*  (United States)

^c UNIVERSITY OF MISSOURI   (United States)

^d CIC NANOGUNE   (Spain)

^e SCUOLA NORMALE SUPERIORE   (Italy)

^f CNR   (Italy)

^g NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^h ISTITUTO ITALIANO DI TECNOLOGIA   (Italy)

ⁱ UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^j BASQUE FOUNDATION FOR SCIENCE   (Spain)

more..

Author keywords

[No Author keywords available]

Indexed keywords

BORON NITRIDE; DAMPING; DIELECTRIC LOSSES; GRAPHENE; NITRIDES; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; VAN DER WAALS FORCES;

GRAPHENE PLASMONS; HEXAGONAL BORON NITRIDE (H-BN); IMPURITY SCATTERING; IN-DEPTH UNDERSTANDING; MANY-BODY EFFECT; NEAR FIELD MICROSCOPY; OPTO-ELECTRONIC SWITCHES; ULTRASTRONG FIELDS;

PLASMONS;

EID: 84925356854     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat4169     Document Type: Article

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