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Volumn 9, Issue 6, 2015, Pages 6502-6510

Van der Waals Epitaxy of Two-Dimensional MoS2-Graphene Heterostructures in Ultrahigh Vacuum

Author keywords

2D material heterostructures; angle resolved photoemission spectroscopy; graphene; MoS2; scanning tunneling microscopy; transition metal dichalcogenides; van der Waals epitaxy

Indexed keywords

ELECTRONIC STRUCTURE; LAYERED SEMICONDUCTORS; MOLYBDENUM; MOLYBDENUM COMPOUNDS; OPTICAL PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PHYSICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSITION METALS; ULTRAHIGH VACUUM; VAN DER WAALS FORCES; WIDE BAND GAP SEMICONDUCTORS;

EID: 84934936611     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b02345     Document Type: Article
Times cited : (172)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.