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Volumn 7, Issue 17, 2015, Pages 7896-7905

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

(12) Xenogiannopoulou, E a Tsipas, P a Aretouli, K E a Tsoutsou, D a Giamini, S A a Bazioti, C b Dimitrakopulos, G P b Komninou, Ph b Brems, S c Huyghebaert, C c Radu, I P c Dimoulas, A a

a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY (Greece)

b ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BISMUTH COMPOUNDS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; PHOTOELECTRON SPECTROSCOPY; SELENIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TOPOLOGY; WIDE BAND GAP SEMICONDUCTORS;

ALUMINUM NITRIDE (ALN); ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; HIGH QUALITY SINGLE CRYSTALS; LARGE-AREA SUBSTRATES; NANOELECTRONIC DEVICES; ROOM-TEMPERATURE PHOTOLUMINESCENCE; THICKNESS SCALING; TOPOLOGICAL PROPERTIES;

NITROGEN COMPOUNDS;

EID: 84929466745 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c4nr06874b Document Type: Article

Times cited : (149)

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