Ultrathin HfON trapping layer for charge-trap memory made by atomic layer deposition

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 993-995

  Wu, Jyun Yi ^a   Chen, Yen Ting ^a   Lin, Ming Ho ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Atomic layer deposition (ALD); charge trapping memory; hafnium oxynitride (HfON)

Indexed keywords

CHARGE STORAGE CHARACTERISTIC; CHARGE TRAP; CHARGE TRAPPING MEMORIES; DATA RETENTION; E-FIELD; ELECTRON DETRAPPING; HAFNIUM OXYNITRIDE; HAFNIUM OXYNITRIDE (HFON); MEMORY WINDOW; SI SUBSTRATES; TRANSIENT CURRENT; TRAPPING LAYERS; TUNNEL OXIDE]; ULTRA-THIN;

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; HAFNIUM; NITRIDES; SILICON COMPOUNDS;

ATOMS;

EID: 77956171624     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052090     Document Type: Article

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