Lateral MoS2 p-n junction formed by chemical doping for use in high-performance optoelectronics

ACS Nano

Volumn 8, Issue 9, 2014, Pages 9332-9340

  Choi, Min Sup ^a,b   Qu, Deshun ^a,b   Lee, Daeyeong ^a,b   Liu, Xiaochi ^a,b   Watanabe, Kenji ^c   Taniguchi, Takashi ^c   Yoo, Won Jong ^a,b  

^a Sungkyunkwan University   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

chemical doping; homogeneous p n junction; lateral junction; molybdenum disulfide; optoelectronics; two dimensional materials

Indexed keywords

BORON NITRIDE; IODINE; OPEN CIRCUIT VOLTAGE; OPTOELECTRONIC DEVICES; PALLADIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

CHEMICAL DOPING; LATERAL JUNCTIONS; MOLYBDENUM DISULFIDE; P-N JUNCTION; TWO-DIMENSIONAL MATERIALS;

MOLYBDENUM COMPOUNDS;

EID: 84919464531     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn503284n     Document Type: Article

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