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Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

Impact of gate work-function on memory characteristics in Al 2O 3/HfO x/Al 2O 3/graphene charge-trap memory devices

(7) Lee, Sejoon a,b Song, Emil B b Kim, Sungmin b Seo, David H c Seo, Sunae d Won Kang, Tae a Wang, Kang L b

a Dongguk University (South Korea)

b UNIVERSITY OF CALIFORNIA (United States)

c Samsung Advanced Institute of Technology (SAIT) (South Korea)

d Sejong University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR; CARRIER CONDUCTION; CHARGE TRAP; FLAT BAND; GATE MATERIALS; GATE STACKS; MEMORY WINDOW; NONVOLATILE MEMORY DEVICES; SINGLE LAYER;

GRAPHENE;

ALUMINUM;

EID: 84862959549 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3675633 Document Type: Article

Times cited : (53)

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