Low operation voltage and high thermal stability of a WSi 2 nanocrystal memory device using an Al 2O 3/HfO 2/Al 2O 3 tunnel layer

Applied Physics Letters

Volumn 100, Issue 7, 2012, Pages

  Uk Lee, Dong ^a   Jun Lee, Hyo ^a   Kyu Kim, Eun ^a   You, Hee Wook ^b   Cho, Won Ju ^b  

^a Hanyang University   (South Korea)

^b Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; DIRECT TUNNELING; ELECTRICAL CHARACTERISTIC; HIGH THERMAL STABILITY; MEMORY WINDOW; NANOCRYSTAL MEMORY DEVICES; NANOCRYSTAL NONVOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OPERATION VOLTAGE; PROGRAM/ERASE; PULSE VOLTAGE; THRESHOLD VOLTAGE SHIFTS;

ACTIVATION ENERGY; HAFNIUM OXIDES; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTOR STORAGE;

ALUMINUM;

EID: 84857269354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684967     Document Type: Article

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