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Applied Physics Letters

Volumn 96, Issue 14, 2010, Pages

Improved thermal stability of Al2 O3 / HfO 2 / Al2 O3 high-k gate dielectric stack on GaAs

(7) Suh, Dong Chan a Cho, Young Dae a Kim, Sun Wook a Ko, Dae Hong a Lee, Yongshik a Cho, Mann Ho a Oh, Jungwoo b

a Yonsei University (South Korea)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE HYSTERESIS; DIELECTRIC STACK; ELECTRICAL CHARACTERISTIC; ELEVATED TEMPERATURE; EQUIVALENT OXIDE THICKNESS; GAAS; GATE DIELECTRIC STACKS; HIGH-K GATE DIELECTRICS; INTERFACIAL OXIDES; INTERFACIAL PROPERTY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; THERMAL STABILITY; TRAP CHARGE;

ALUMINUM; CAPACITANCE; DIELECTRIC DEVICES; GALLIUM ALLOYS; GALLIUM ARSENIDE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; THERMODYNAMIC STABILITY; THERMOGRAVIMETRIC ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DIELECTRICS;

EID: 77951198414 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3377915 Document Type: Article

Times cited : (49)

References (15)

1
- 77951164536
- International technology roadmafor semiconductors (ITRS) edition
- International technology roadmap for semiconductors (ITRS) 2009 edition, http://www.itrs.net
- (2009)

2
- 0017613686
- SCIEAS 0036-8075,. 10.1126/science.195.4283.1230
- R. W. Keyes, Science SCIEAS 0036-8075 195, 1230 (1977). 10.1126/science.195.4283.1230
- (1977) Science , vol.195 , pp. 1230
- Keyes, R.W.¹

3
- 51949117071
- S. Suthram, Y. Sun, P. Majhi, I. Ok, H. Kim, H. R. Harris, N. Goel, S. Parthasarathy, T. Koehler, T. Acosta, T. Nishida, H. H. Tseng, W. Tsai, J. Lee, R. Jammy, and S. E. Thompson, Dig. Tech. Pap.-Symp. VLSI Technol 2008, 182.
- Dig. Tech. Pap. - Symp. VLSI Technol , vol.2008 , pp. 182
- Suthram, S.¹ Sun, Y.² Majhi, P.³ Ok, I.⁴ Kim, H.⁵ Harris, H.R.⁶ Goel, N.⁷ Parthasarathy, S.⁸ Koehler, T.⁹ Acosta, T.¹⁰ Nishida, T.¹¹ Tseng, H.H.¹² Tsai, W.¹³ Lee, J.¹⁴ Jammy, R.¹⁵ Thompson, S.E.¹⁶

4
- 34848833510
- Temperature effects of Si interface passivation layer deposition on high- k III-V metal-oxide-semiconductor characteristics
- DOI 10.1063/1.2790780
- I. Ok, H. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 91, 132104 (2007). 10.1063/1.2790780 (Pubitemid 47505198)
- (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132104
- Ok, I.¹ Kim, H.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.C.⁸

5
- 42349100138
- Inversion mode n -channel GaAs field effect transistor with high- k /metal gate
- DOI 10.1063/1.2912027
- J. P. de Souza, E. Kiewra, Y. Sun, A. Callengari, D. K. Sadana, G. Shahidi, D. J. Webb, J. Fompeyrine, R. Germann, C. Rossel, and C. Marchiori, Appl. Phys. Lett. APPLAB 0003-6951 92, 153508 (2008). 10.1063/1.2912027 (Pubitemid 351555776)
- (2008) Applied Physics Letters , vol.92 , Issue.15 , pp. 153508
- De Souza, J.P.¹ Kiewra, E.² Sun, Y.³ Callegari, A.⁴ Sadana, D.K.⁵ Shahidi, G.⁶ Webb, D.J.⁷ Fompeyrine, J.⁸ Germann, R.⁹ Rossel, C.¹⁰ Marchiori, C.¹¹

6
- 49749114556
- APPLAB 0003-6951,. 10.1063/1.2968293
- H. J. Oh, J. Q. Lin, S. J. Lee, G. K. Dalapati, A. Sridhara, D. Z. Chi, S. J. Chua, G. Q. Lo, and D. L. Kwong, Appl. Phys. Lett. APPLAB 0003-6951 93, 062107 (2008). 10.1063/1.2968293
- (2008) Appl. Phys. Lett. , vol.93 , pp. 062107
- Oh, H.J.¹ Lin, J.Q.² Lee, S.J.³ Dalapati, G.K.⁴ Sridhara, A.⁵ Chi, D.Z.⁶ Chua, S.J.⁷ Lo, G.Q.⁸ Kwong, D.L.⁹

7
- 36049033671
- 2 on GaAs
- DOI 10.1063/1.2805811
- G. Seguini, M. Perego, S. Spiga, and M. Fanciulli, Appl. Phys. Lett. APPLAB 0003-6951 91, 192902 (2007). 10.1063/1.2805811 (Pubitemid 350097901)
- (2007) Applied Physics Letters , vol.91 , Issue.19 , pp. 192902
- Seguini, G.¹ Perego, M.² Spiga, S.³ Fanciulli, M.⁴ Dimoulas, A.⁵

8
- 42549171457
- Interface of atomic layer deposited Hf O2 films on GaAs (100) surfaces
- DOI 10.1063/1.2908223
- J. C. Hackley, J. D. Demaree, and T. Gougousi, Appl. Phys. Lett. APPLAB 0003-6951 92, 162902 (2008). 10.1063/1.2908223 (Pubitemid 351590723)
- (2008) Applied Physics Letters , vol.92 , Issue.16 , pp. 162902
- Hackley, J.C.¹ Demaree, J.D.² Gougousi, T.³

9
- 56249143080
- APPLAB 0003-6951,. 10.1063/1.2996261
- C. Y. Kim, S. W. Cho, M. -H. Cho, K. B. Chung, C. -H. An, H. Kim, H. J. Lee, and D. -H. Ko, Appl. Phys. Lett. APPLAB 0003-6951 93, 192902 (2008). 10.1063/1.2996261
- (2008) Appl. Phys. Lett. , vol.93 , pp. 192902
- Kim, C.Y.¹ Cho, S.W.² Cho, M.-H.³ Chung, K.B.⁴ An, C.-H.⁵ Kim, H.⁶ Lee, H.J.⁷ Ko, D.-H.⁸

10
- 36348941714
- Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2 O3 as gate dielectric
- DOI 10.1063/1.2814052
- H. C. Lin, Y. Yang, H. Sharifi, S. K. Kim, Y. Xuan, T. Shen, S. Mohammadi, and P. D. Ye, Appl. Phys. Lett. APPLAB 0003-6951 91, 212101 (2007). 10.1063/1.2814052 (Pubitemid 350159039)
- (2007) Applied Physics Letters , vol.91 , Issue.21 , pp. 212101
- Lin, H.C.¹ Yang, T.² Sharifi, H.³ Kim, S.K.⁴ Xuan, Y.⁵ Shen, T.⁶ Mohammadi, S.⁷ Ye, P.D.⁸

11
- 44349122944
- 3 gate dielectric
- DOI 10.1063/1.2931708
- D. Shahrjerdi, T. Akyol, M. Ramon, D. I. Garcia-Gutierrez, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. APPLAB 0003-6951 92, 203505 (2008). 10.1063/1.2931708 (Pubitemid 351733946)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 203505
- Shahrjerdi, D.¹ Akyol, T.² Ramon, M.³ Garcia-Gutierrez, D.I.⁴ Tutuc, E.⁵ Banerjee, S.K.⁶

12
- 44849143596
- APPLAB 0003-6951,. 10.1063/1.2937404
- D. Shahrjerdi, D. I. Garcia-Gutierrez, E. Tutuc, and S. K. Banerjee, Appl. Phys. Lett. APPLAB 0003-6951 92, 223501 (2008). 10.1063/1.2937404
- (2008) Appl. Phys. Lett. , vol.92 , pp. 223501
- Shahrjerdi, D.¹ Garcia-Gutierrez, D.I.² Tutuc, E.³ Banerjee, S.K.⁴

13
- 44349160650
- 2 and silicon interface passivation layer
- DOI 10.1063/1.2917823
- I. Ok, H. -S. Kim, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, D. Garcia, P. Majhi, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 92, 202908 (2008). 10.1063/1.2917823 (Pubitemid 351733918)
- (2008) Applied Physics Letters , vol.92 , Issue.20 , pp. 202908
- Ok, I.¹ Kim, H.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Garcia, D.⁸ Majhi, P.⁹ Lee, J.C.¹⁰

14
- 38549171799
- Inversion-type enhancement-mode Hf O2-based GaAs metal-oxide- semiconductor field effect transistors with a thin Ge layer
- DOI 10.1063/1.2838294
- H. -S. Kim, I. Ok, M. Zhang, F. Zhu, S. Park, J. Yum, H. Zhao, and J. C. Lee, Appl. Phys. Lett. APPLAB 0003-6951 92, 032907 (2008). 10.1063/1.2838294 (Pubitemid 351160632)
- (2008) Applied Physics Letters , vol.92 , Issue.3 , pp. 032907
- Kim, H.-S.¹ Ok, I.² Zhang, M.³ Zhu, F.⁴ Park, S.⁵ Yum, J.⁶ Zhao, H.⁷ Lee, J.C.⁸ Oh, J.⁹ Majhi, P.¹⁰

15
- 68949146658
- ESLEF6 1099-0062,. 10.1149/1.3193534
- D. C. Suh, Y. D. Cho, Y. Lee, D. -H. Ko, K. B. Chung, and M. -H. Cho, Electrochem. Solid-State Lett. ESLEF6 1099-0062 12, H376 (2009). 10.1149/1.3193534
- (2009) Electrochem. Solid-State Lett. , vol.12 , pp. 376
- Suh, D.C.¹ Cho, Y.D.² Lee, Y.³ Ko, D.-H.⁴ Chung, K.B.⁵ Cho, M.-H.⁶

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