Reduced multilayer graphene oxide floating gate flash memory with large memory window and robust retention characteristics

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1136-1138

  Mishra, Abhishek ^a   Janardanan, Amritha ^a   Khare, Manali ^a   Kalita, Hemen ^a   Kottantharayil, Anil ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Activation energy; flash memory; multilayer graphene; program erase transient; retention

Indexed keywords

BALLISTIC TRANSPORTS; CHARGE STORAGE; FLASH MEMORY STRUCTURE; FLOATING GATE FLASH MEMORY; MULTILAYER GRAPHENE; RETENTION; RETENTION CHARACTERISTICS; STATE-RETENTION;

ACTIVATION ENERGY; DIGITAL STORAGE; GRAPHENE; MULTILAYERS;

FLASH MEMORY;

EID: 84883137198     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2272643     Document Type: Article

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