High resolution medium energy ion scattering analysis for the quantitative depth profiling of ultrathin high- k layers

Journal of Vacuum Science and Technology B

Volumn 28, Issue 1, 2010, Pages

  Reading, M A ^a   Van Den Berg, J A ^a   Zalm, P C ^a   Armour, D G ^a   Bailey, P ^b   Noakes, T C Q ^b   Parisini, A ^c   Conard, T ^d   De Gendt, S ^d  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c CNR   (Italy)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; CRYSTAL ATOMIC STRUCTURE; DEPTH PROFILING; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; METAL ANALYSIS; METALS; MOS DEVICES; OXIDE FILMS; SILICATES;

DECOUPLED PLASMA NITRIDATION; HF SILICATE; HIGH RESOLUTION; HIGH- K; MEDIUM ENERGY ION SCATTERING; METAL-OXIDE; QUANTITATIVE DEPTH PROFILING; SCATTERING ANALYSIS; SUB NANOMETERS; ULTRA-THIN;

ALUMINUM NITRIDE;

EID: 77949373218     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3248264     Document Type: Conference Paper

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