Twin thin-film transistor nonvolatile memory with an indium-gallium-zinc- oxide floating gate

IEEE Electron Device Letters

Volumn 34, Issue 1, 2013, Pages 75-77

  Hung, Min Feng ^a   Wu, Yung Chun ^a   Chang, Jiun Jye ^a   Chang Liao, Kuei Shu ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Indium gallium zinc oxide (IGZO); nonvolatile memory (NVM); planar; twin thin film transistor (twin TFT)

Indexed keywords

COUPLING RATIOS; FLOATING GATES; GATE LENGTH; IN-GA-ZN-O; INDIUM GALLIUM ZINC OXIDES (IGZO); INITIAL VALUES; LOW TEMPERATURES; MEMORY WINDOW; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; PLANAR; POLYCRYSTALLINE SILICON (POLY-SI); STORAGE LAYERS; STORED CHARGE; SYSTEM ON PANEL;

DISPLAY DEVICES; GALLIUM; INDIUM; NONVOLATILE STORAGE; POLYSILICON; ZINC;

THIN FILM TRANSISTORS;

EID: 84871730319     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2226232     Document Type: Article

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