Energy-band engineering for tunable memory characteristics through controlled doping of reduced graphene oxide

ACS Nano

Volumn 8, Issue 2, 2014, Pages 1923-1931

  Han, Su Ting ^a   Zhou, Ye ^a   Yang, Qing Dan ^a   Zhou, Li ^a   Huang, Long Biao ^a   Yan, Yan ^a   Lee, Chun Sing ^a   Roy, Vellaisamy A L ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

chemical doping; flexible floating gate memory; increased work function; reduced graphene oxide; tunable memory characteristics

Indexed keywords

BAND STRUCTURE; CHLORINE COMPOUNDS; COMPUTER CIRCUITS; GOLD COMPOUNDS; GRAPHENE; WORK FUNCTION;

CHEMICAL DOPING; FLOATING GATE MEMORY; FLOATING GATE MEMORY DEVICES; REDUCED GRAPHENE OXIDES; REDUCED GRAPHENE OXIDES (RGO); THRESHOLD VOLTAGE SHIFTS; THRESHOLD VOLTAGES (VTH); TUNABLE MEMORY CHARACTERISTICS;

THRESHOLD VOLTAGE;

EID: 84894634781     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn406505t     Document Type: Article

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