Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 884-889

  Maikap, S ^a   Lee, H Y ^b   Wang, T Y ^c   Tzeng, P J ^b   Wang, C C ^b   Lee, L S ^b   Liu, K C ^a   Yang, J R ^c   Tsai, M J ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; FILM GROWTH; HAFNIUM COMPOUNDS; PERMITTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

BLOCKING OXIDES; HIGH DENSITY NONVOLATILE MEMORY DEVICE APPLICATIONS; HIGH TEMPERATURE ANNEALING TREATMENT; METAL MEMORY STRUCTURES;

THIN FILMS;

EID: 34547422784     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/010     Document Type: Article

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