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Volumn 10, Issue 5, 2014, Pages 343-350

Spin and pseudospins in layered transition metal dichalcogenides

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); LABORATORIES; MAGNETIC MOMENTS; TRANSITION METALS;

EID: 84899764319     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2942     Document Type: Review
Times cited : (2879)

References (93)
  • 1
    • 0035900398 scopus 로고    scopus 로고
    • Spintronics: A spin-based electronics vision for the future
    • Wolf, S. A. et al. Spintronics: A spin-based electronics vision for the future. Science 294, 1488-1495 (2001
    • (2001) Science , vol.294 , pp. 1488-1495
    • Wolf, S.A.1
  • 2
    • 0642310326 scopus 로고
    • Theory of valley splitting in an N-channel (100) inversion layer of Si III Enhancement of splittings by many-body eects
    • J Ohkawa, F. &Uemura, Y. Theory of valley splitting in an N-channel (100) inversion layer of Si III. Enhancement of splittings by many-body eects. J. Phys. Soc. Jpn 43, 925-932 (1977
    • (1977) J. Phys. Soc. Jpn , vol.43 , pp. 925-932
    • Johkawa, F.1    Uemura, Y.2
  • 3
    • 4243296917 scopus 로고
    • Valley valley splitting in inversion layers on a high-index surface of silicon
    • Sham, L., Allen, S., Kamgar, A. &Tsui, D. Valley valley splitting in inversion layers on a high-index surface of silicon. Phys. Rev. Lett. 40, 472-475 (1978
    • (1978) Phys. Rev. Lett , vol.40 , pp. 472-475
    • Sham, L.1    Allen, S.2    Kamgar, A.3    Tsui, D.4
  • 4
    • 5844382996 scopus 로고
    • Interaction-induced transition at low densities in silicon inversion layer
    • Bloss,W., Sham, L. &Vinter, V. Interaction-induced transition at low densities in silicon inversion layer. Phys. Rev. Lett. 43, 1529-1532 (1979
    • (1979) Phys. Rev. Lett , vol.43 , pp. 1529-1532
    • Bloss, W.1    Sham, L.2    Vinter, V.3
  • 5
    • 0001448504 scopus 로고
    • Eective-mass approximation in the presence of an interface
    • Sham, L. &Nakayama, M. Eective-mass approximation in the presence of an interface. Phys. Rev. B 20, 734-747 (1979
    • (1979) Phys. Rev. B , vol.20 , pp. 734-747
    • Sham, L.1    Nakayama, M.2
  • 6
    • 33750434277 scopus 로고    scopus 로고
    • Quantized conductance in an AlAs two-dimensional electron system quantum point contact
    • Gunawan, O., Habib, B., De Poortere, E. &Shayegan, M. Quantized conductance in an AlAs two-dimensional electron system quantum point contact. Phys. Rev. B 74, 155436 (2006
    • (2006) Phys. Rev. B , vol.74 , pp. 155436
    • Gunawan, O.1    Habib, B.2    De Poortere, E.3    Shayegan, M.4
  • 7
  • 8
    • 36849027178 scopus 로고    scopus 로고
    • Valley-contrasting physics in graphene: Magnetic moment and topological transport
    • Xiao, D., Yao,W. &Niu, Q. Valley-contrasting physics in graphene: Magnetic moment and topological transport. Phys. Rev. Lett. 99, 236809 (2007
    • (2007) Phys. Rev. Lett , vol.99 , pp. 236809
    • Xiao, D.1    Yao, W.2    Niu, Q.3
  • 9
    • 44949249735 scopus 로고    scopus 로고
    • Valley-dependent optoelectronics from inversion symmetry breaking
    • Yao,W., Xiao, D. &Niu, Q. Valley-dependent optoelectronics from inversion symmetry breaking. Phys. Rev. B 77, 235406 (2008
    • (2008) Phys. Rev. B , vol.77 , pp. 235406
    • Yao, W.1    Xiao, D.2    Niu, Q.3
  • 10
    • 34547322081 scopus 로고    scopus 로고
    • Valley polarization and susceptibility of composite fermions around a filling factor D32
    • Bishop, N. et al. Valley polarization and susceptibility of composite fermions around a filling factor-D32. Phys. Rev. Lett. 98, 266404 (2007
    • (2007) Phys. Rev. Lett , vol.98 , pp. 266404
    • Bishop, N.1
  • 11
    • 0037175889 scopus 로고    scopus 로고
    • Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
    • Shkolnikov, Y., De Poortere, E., Tutuc, E. &Shayegan, M. Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field. Phys. Rev. Lett. 89, 226805 (2002
    • (2002) Phys. Rev. Lett , vol.89 , pp. 226805
    • Shkolnikov, Y.1    De Poortere, E.2    Tutuc, E.3    Shayegan, M.4
  • 13
    • 79961094521 scopus 로고    scopus 로고
    • Photoexcitation of valley-orbit currents in 111)-oriented silicon metal-oxide-semiconductor field-eect transistors
    • Karch, J. et al. Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-eect transistors. Phys. Rev. B 83, 121312 (2011
    • (2011) Phys. Rev. B , vol.83 , pp. 121312
    • Karch, J.1
  • 14
    • 84880798259 scopus 로고    scopus 로고
    • Generation, transport and detection of valley-polarized electrons in Diamond
    • Isberg, J. et al. Generation, transport and detection of valley-polarized electrons in Diamond. Nature Mater. 12, 760-764 (2013
    • (2013) Nature Mater , vol.12 , pp. 760-764
    • Isberg, J.1
  • 15
  • 17
    • 23044442056 scopus 로고    scopus 로고
    • Two-dimensional atomic crystals
    • Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451-10453 (2005
    • (2005) Proc. Natl Acad. Sci. USA , vol.102 , pp. 10451-10453
    • Novoselov, K.S.1
  • 18
    • 79957532544 scopus 로고    scopus 로고
    • Graphene valley filter using a line defect
    • Gunlycke, D. &White, C. T. Graphene valley filter using a line defect. Phys. Rev. Lett. 106, 136806 (2011
    • (2011) Phys. Rev. Lett , vol.106 , pp. 136806
    • Gunlycke, D.1    White, C.T.2
  • 20
    • 84860752361 scopus 로고    scopus 로고
    • Coupled spin and valley physics in monolayers of MoS2 and other Group-VI dichalcogenides
    • Xiao, D., Liu, G-B., Feng,W., Xu, X. &Yao,W. Coupled spin and valley physics in monolayers of MoS2 and other Group-VI dichalcogenides. Phys. Rev. Lett. 108, 196802 (2012
    • (2012) Phys. Rev. Lett , vol.108 , pp. 196802
    • Xiao, D.1    Liu, G.-B.2    Feng, W.3    Xu, X.4    Yao, W.5
  • 21
    • 84864874878 scopus 로고    scopus 로고
    • Control of valley polarization in monolayer MoS2 by optical helicity
    • Mak, K. F., He, K., Shan, J. &Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nature Nanotechnol. 7, 494-498 (2012
    • (2012) Nature Nanotechnol , vol.7 , pp. 494-498
    • Mak, K.F.1    He, K.2    Shan, J.3    Heinz, T.F.4
  • 22
    • 84864881664 scopus 로고    scopus 로고
    • Valley polarization in MoS2 monolayers by optical pumping
    • Zeng, H., Dai, J., Yao,W., Xiao, D. &Cui, X. Valley polarization in MoS2 monolayers by optical pumping. Nature Nanotechnol. 7, 490-493 (2012
    • (2012) Nature Nanotechnol , vol.7 , pp. 490-493
    • Zeng, H.1    Dai Yao J, W.2    Xiao, D.3    Cui, X.4
  • 23
    • 84863325332 scopus 로고    scopus 로고
    • Valley-selective circular dichroism of monolayer molybdenum disulphide
    • Cao, T. et al. Valley-selective circular dichroism of monolayer molybdenum disulphide. Nature Commun. 3, 887 (2012
    • (2012) Nature Commun , vol.3 , pp. 887
    • Cao, T.1
  • 24
    • 84883740799 scopus 로고    scopus 로고
    • Optical generation of excitonic valley coherence in monolayerWSe2
    • Jones, A. M. et al. Optical generation of excitonic valley coherence in monolayerWSe2. Nature Nanotechnol. 8, 634-638 (2013
    • (2013) Nature Nanotechnol , vol.8 , pp. 634-638
    • Jones, A.M.1
  • 25
    • 77956143840 scopus 로고    scopus 로고
    • Berry phase eects on electronic properties
    • Xiao, D., Chang, M-C. &Niu, Q. Berry phase eects on electronic properties. Rev. Mod. Phys. 82, 1959-2007 (2010
    • (2010) Rev. Mod. Phys , vol.82 , pp. 1959-2007
    • Xiao, D.1    Chang, M.-C.2    Niu, Q.3
  • 26
    • 0001516128 scopus 로고
    • Band structures of transition-metal-dichalcogenide layer compounds
    • Mattheiss, L. Band structures of transition-metal-dichalcogenide layer compounds. Phys. Rev. B 8, 3719-3740 (1973
    • (1973) Phys. Rev , vol.B 8 , pp. 3719-3740
    • Mattheiss, L.1
  • 27
    • 84867807559 scopus 로고    scopus 로고
    • Spin-valley optical selection rule and strong circular dichroism in silicene
    • Ezawa, M. Spin-valley optical selection rule and strong circular dichroism in silicene. Phys. Rev. B 86, 161407 (2012
    • (2012) Phys. Rev. B , vol.86 , pp. 161407
    • Ezawa, M.1
  • 28
    • 79960624487 scopus 로고    scopus 로고
    • Spontaneous quantum Hall states in chirally stacked few-layer graphene systems
    • Zhang, F., Jung, J., Fiete, G. A., Niu, Q. &MacDonald, A. H. Spontaneous quantum Hall states in chirally stacked few-layer graphene systems. Phys. Rev. Lett. 106, 156801 (2011
    • (2011) Phys. Rev. Lett , vol.106 , pp. 156801
    • Zhang, F.1    Jung, J.2    Fiete, G.A.3    Niu, Q.4    Macdonald, A.H.5
  • 29
    • 80052453324 scopus 로고    scopus 로고
    • Valley-Hall kink and edge states in multilayer graphene
    • Jung, J., Zhang, F., Qiao, Z. &MacDonald, A. H. Valley-Hall kink and edge states in multilayer graphene. Phys. Rev. B 84, 075418 (2011
    • (2011) Phys. Rev. B , vol.84 , pp. 075418
    • Jung, J.1    Zhang, F.2    Qiao, Z.3    Macdonald, A.H.4
  • 30
    • 84887088712 scopus 로고    scopus 로고
    • Topological Kirchho law and bulk-edge correspondence for valley Chern and spin-valley Chern numbers
    • Ezawa, M. Topological Kirchho law and bulk-edge correspondence for valley Chern and spin-valley Chern numbers. Phys. Rev. B 88, 161406 (2013
    • (2013) Phys. Rev , vol.B 88 , pp. 161406
    • Ezawa, M.1
  • 31
    • 82655185068 scopus 로고    scopus 로고
    • Graphene quantum dots for valley-based quantum computing: A feasibility study
    • Wu, G. Y., Lue, N-Y. &Chang, L. Graphene quantum dots for valley-based quantum computing: A feasibility study. Phys. Rev. B 84, 195463 (2011
    • (2011) Phys. Rev , vol.B 84 , pp. 195463
    • Wu, G.Y.1    Lue, N.-Y.2    Chang, L.3
  • 32
    • 84864590126 scopus 로고    scopus 로고
    • Graphene-based qubits in quantum communications
    • Wu, G. Y. &Lue, N-Y. Graphene-based qubits in quantum communications. Phys. Rev. B 86, 045456 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 045456
    • Wu, G.Y.1    Lue, N.-Y.2
  • 33
    • 84867443114 scopus 로고    scopus 로고
    • Valley-based field-eect transistors in grapheme
    • Lee, M-K., Lue, N-Y.,Wen, C-K. &Wu, G. Y. Valley-based field-eect transistors in graphene. Phys. Rev. B 86, 165411 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 165411
    • Lee, M.-K.1    Lue, N.-Y.2    Wen, C.-K.3    Wu, G.Y.4
  • 34
    • 84875652036 scopus 로고    scopus 로고
    • Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization
    • Wu, S. et al. Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano 7, 2768-2772 (2013
    • (2013) ACS Nano , vol.7 , pp. 2768-2772
    • Wu, S.1
  • 35
    • 67149121054 scopus 로고    scopus 로고
    • Direct observation of a widely tunable bandgap in bilayer graphene
    • Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820-823 (2009
    • (2009) Nature , vol.459 , pp. 820-823
    • Zhang, Y.1
  • 36
    • 67649502407 scopus 로고    scopus 로고
    • Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy
    • Mak, K., Lui, C., Shan, J. &Heinz, T. Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy. Phys. Rev. Lett. 102, 256405 (2009
    • (2009) Phys. Rev. Lett , vol.102 , pp. 256405
    • Mak, K.1    Lui, C.2    Shan, J.3    Heinz, T.4
  • 37
    • 36349006287 scopus 로고    scopus 로고
    • Electronic properties of MoS2 nanoparticles
    • Li, T. &Galli, G. Electronic properties of MoS2 nanoparticles. J. Phys. Chem. C 111, 16192-16196 (2007
    • (2007) J. Phys. Chem , vol.C 111 , pp. 16192-16196
    • Li, T.1    Galli, G.2
  • 38
    • 63249130109 scopus 로고    scopus 로고
    • Electronic structure of two-dimensional crystals from ab initio theory
    • Lebègue, S. &Eriksson, O. Electronic structure of two-dimensional crystals from ab initio theory. Phys. Rev. B 79, 115409 (2009
    • (2009) Phys. Rev , vol.B 79 , pp. 115409
    • Lebègue, S.1    Eriksson, O.2
  • 39
    • 80455150073 scopus 로고    scopus 로고
    • Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
    • Zhu, Z. Y., Cheng, Y. C. &Schwingenschlögl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011
    • (2011) Phys. Rev , vol.B 84 , pp. 153402
    • Zhu, Z.Y.1    Cheng, Y.C.2    Schwingenschlögl, U.3
  • 40
    • 77951069162 scopus 로고    scopus 로고
    • Emerging photoluminescence in monolayer MoS2
    • Splendiani, A. et al. Emerging photoluminescence in monolayer MoS2. Nano Lett. 10, 1271-1275 (2010
    • (2010) Nano Lett , vol.10 , pp. 1271-1275
    • Splendiani, A.1
  • 41
    • 77957204738 scopus 로고    scopus 로고
    • Atomically thin MoS2: A new direct-gap semiconductor
    • Mak, K. F., Lee, C., Hone, J., Shan, J. &Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010
    • (2010) Phys. Rev. Lett , vol.105 , pp. 136805
    • Mak, K.F.1    Lee, C.2    Hone, J.3    Shan, J.4    Heinz, T.F.5
  • 42
    • 84884277879 scopus 로고    scopus 로고
    • Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy
    • Jin,W. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013
    • (2013) Phys. Rev. Lett , vol.111 , pp. 106801
    • Jin, W.1
  • 43
    • 84893714290 scopus 로고    scopus 로고
    • Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
    • Zhang, Y. et al. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2. Nature Nanotechnol. 9, 111-115 (2014
    • (2014) Nature Nanotechnol , vol.9 , pp. 111-115
    • Zhang, Y.1
  • 44
    • 84871091724 scopus 로고    scopus 로고
    • Eects of strain on band structure and eective masses in MoS2
    • Peelaers, H. &Van DeWalle, C. G. Eects of strain on band structure and eective masses in MoS2. Phys. Rev. B 86, 241401 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 241401
    • Peelaers, H.1    Van De Walle, C.G.2
  • 45
    • 84859781328 scopus 로고    scopus 로고
    • Electronic structure of a single MoS2 monolayer
    • Kadantsev, E. S. &Hawrylak, P. Electronic structure of a single MoS2 monolayer. Solid State Commun. 152, 909-913 (2012
    • (2012) Solid State Commun , vol.152 , pp. 909-913
    • Kadantsev, E.S.1    Hawrylak, P.2
  • 46
    • 84874582246 scopus 로고    scopus 로고
    • Electrical control of neutral and charged excitons in a monolayer semiconductor
    • Ross, J. S. et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nature Commun. 4, 1474 (2013
    • (2013) Nature Commun , vol.4 , pp. 1474
    • Ross, J.S.1
  • 47
    • 84875437247 scopus 로고    scopus 로고
    • Tightly bound trions in monolayer MoS2
    • Mak, K. F. et al. Tightly bound trions in monolayer MoS2. Nature Mater. 12, 207-211 (2013
    • (2013) Nature Mater , vol.12 , pp. 207-211
    • Mak, K.F.1
  • 48
    • 84876418268 scopus 로고    scopus 로고
    • Orientation of luminescent excitons in layered nanomaterials
    • Schuller, J. A. et al. Orientation of luminescent excitons in layered nanomaterials. Nature Nanotechnol. 8, 271-276 (2013
    • (2013) Nature Nanotechnol , vol.8 , pp. 271-276
    • Schuller, J.A.1
  • 49
    • 84879114078 scopus 로고    scopus 로고
    • Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating
    • Tongay, S. et al. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 13, 2831-2836 (2013
    • (2013) Nano Lett , vol.13 , pp. 2831-2836
    • Tongay, S.1
  • 50
    • 84890376834 scopus 로고    scopus 로고
    • Tunable photoluminescence of monolayer MoS2 via chemical doping
    • Mouri, S., Miyauchi, Y. &Matsuda, K. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 13, 5944-5948 (2013
    • (2013) Nano Lett , vol.13 , pp. 5944-5948
    • Mouri, S.1    Miyauchi, Y.2    Matsuda, K.3
  • 51
    • 84887852396 scopus 로고    scopus 로고
    • Local strain engineering in atomically thin MoS2
    • Castellanos-Gomez, A. et al. Local strain engineering in atomically thin MoS2. Nano Lett. 13, 5361-5366 (2013
    • (2013) Nano Lett , vol.13 , pp. 5361-5366
    • Castellanos-Gomez, A.1
  • 52
    • 84881590746 scopus 로고    scopus 로고
    • Bandgap engineering of strained monolayer and bilayer MoS2
    • Conley, H. J. et al. Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett. 13, 3626-3630 (2013
    • (2013) Nano Lett , vol.13 , pp. 3626-3630
    • Conley, H.J.1
  • 53
    • 84884874494 scopus 로고    scopus 로고
    • Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2
    • Zhu, C. R. et al. Strain tuning of optical emission energy and polarization in monolayer and bilayer MoS2. Phys. Rev. B 88, 121301 (2013
    • (2013) Phys. Rev , vol.B 88 , pp. 121301
    • Zhu, C.R.1
  • 54
    • 84879076657 scopus 로고    scopus 로고
    • Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
    • He, K., Poole, C., Mak, K. F. &Shan, J. Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2. Nano Lett. 2931-2936 (2013
    • (2013) Nano Lett , pp. 2931-2936
    • He, K.1    Poole, C.2    Mak, K.F.3    Shan, J.4
  • 55
    • 0000343311 scopus 로고    scopus 로고
    • Two-dimensional charged-exciton complexes
    • Thilagam, A. Two-dimensional charged-exciton complexes. Phys. Rev. B 55, 7804-7808 (1997
    • (1997) Phys. Rev , vol.B 55 , pp. 7804-7808
    • Thilagam, A.1
  • 56
    • 84888107960 scopus 로고    scopus 로고
    • Optical spectrum of MoS2: Many-body eects and diversity of exciton states
    • Qiu, D. Y., da Jornada, F. H. &Louie, S. G. Optical spectrum of MoS2: Many-body eects and diversity of exciton states. Phys. Rev. Lett. 111, 216805 (2013
    • (2013) Phys. Rev. Lett , vol.111 , pp. 216805
    • Qiu, D.Y.1    Da Jornada, F.H.2    Louie, S.G.3
  • 57
    • 84870655918 scopus 로고    scopus 로고
    • Strain-engineered artificial atom as a broad-spectrum solar energy funnel
    • Feng, J., Qian, X., Huang, C-W. &Li, J. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nature Photonics 6, 866-872 (2012
    • (2012) Nature Photonics , vol.6 , pp. 866-872
    • Feng, J.1    Qian, X.2    Huang, C.-W.3    Li, J.4
  • 58
    • 84876179334 scopus 로고    scopus 로고
    • Quasiparticle band structures and optical properties of strained monolayer mos2 andws2
    • Shi, H., Pan, H., Zhang, Y-W. &Yakobson, B. I. Quasiparticle band structures and optical properties of strained monolayer MoS2 andWS2. Phys. Rev. B 87, 155304 (2013
    • (2013) Phys. Rev , vol.B 87 , pp. 155304
    • Shi, H.1    Pan, H.2    Zhang, Y.-W.3    Yakobson, B.I.4
  • 59
    • 84861643796 scopus 로고    scopus 로고
    • Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
    • Cheiwchanchamnangij, T. &Lambrecht,W. R. L. Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2. Phys. Rev. B 85, 205302 (2012
    • (2012) Phys. Rev B , vol.85 , pp. 205302
    • Cheiwchanchamnangij, T.1    Lambrecht, W.R.L.2
  • 60
    • 84866429144 scopus 로고    scopus 로고
    • Large excitonic eects in monolayers of molybdenum and tungsten Dichalcogenides
    • Ramasubramaniam, A. Large excitonic eects in monolayers of molybdenum and tungsten Dichalcogenides. Phys. Rev. B 86, 115409 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 115409
    • Ramasubramaniam, A.1
  • 62
    • 84894505839 scopus 로고    scopus 로고
    • Carrier and polarization Dynamics in monolayer MoS2
    • Lagarde, D. et al. Carrier and polarization Dynamics in monolayer MoS2. Phys. Rev. Lett. 112, 047401 (2014
    • (2014) Phys. Rev. Lett , vol.112 , pp. 047401
    • Lagarde, D.1
  • 63
    • 84874446614 scopus 로고    scopus 로고
    • Exciton Dynamics in suspended monolayer and few-layerMoS2 2D crystals
    • Shi, H. et al. Exciton Dynamics in suspended monolayer and few-layerMoS2 2D crystals. ACS Nano 7, 1072-1080 (2013
    • (2013) ACS Nano , vol.7 , pp. 1072-1080
    • Shi, H.1
  • 64
    • 84899741313 scopus 로고    scopus 로고
    • Exciton Dynamics in atomically thin MoS2: Inter-excitonic interaction and broadening kinetics
    • Sim, S. et al. Exciton Dynamics in atomically thin MoS2: Inter-excitonic interaction and broadening kinetics. Preprint at http://arxiv.org/abs/1308.2023 (2013
    • (2013) Preprint at
    • Sim, S.1
  • 65
    • 84899734422 scopus 로고    scopus 로고
    • Exciton-exciton annihilation in MoSe2 monolayers
    • Kumar, N. et al. Exciton-exciton annihilation in MoSe2 monolayers. Preprint at http://arxiv.org/abs/1311.1079 (2013
    • (2013) Preprint at
    • Kumar, N.1
  • 66
    • 84892164267 scopus 로고    scopus 로고
    • Many body eects in valleytronics: Direct measurement of valley lifetimes in single layer MoS2
    • Mai, C. et al. Many body eects in valleytronics: Direct measurement of valley lifetimes in single layer MoS2. Nano Lett. 14, 202-206 (2013
    • (2013) Nano Lett , vol.14 , pp. 202-206
    • Mai, C.1
  • 67
    • 84865074502 scopus 로고    scopus 로고
    • Robust optical emission polarization in MoS2 monolayers through selective valley excitation
    • Sallen, G. et al. Robust optical emission polarization in MoS2 monolayers through selective valley excitation. Phys. Rev. B 86, 081301 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 081301
    • Sallen, G.1
  • 68
    • 84874655220 scopus 로고    scopus 로고
    • Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
    • Wu, S. et al. Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2. Nature Phys. 9, 149-153 (2013
    • (2013) Nature Phys , vol.9 , pp. 149-153
    • Wu, S.1
  • 69
    • 5544277407 scopus 로고
    • Electronic structure of MoSe2, MoS2, andWSe2 II the nature of the optical band gaps
    • Coehoorn, R., Haas, C. &de Groot, R. Electronic structure of MoSe2, MoS2, andWSe2 II The nature of the optical band gaps. Phys. Rev. B 35, 6203-6206 (1987
    • (1987) Phys. Rev , vol.B 35 , pp. 6203-6206
    • Coehoorn, R.1    Haas, C.2    De Groot, R.3
  • 70
    • 84872845513 scopus 로고    scopus 로고
    • Evolution of electronic structure in atomically thin sheets of WS2 andWSe2
    • Zhao,W. et al. Evolution of electronic structure in atomically thin sheets of WS2 andWSe2. ACS Nano 7, 791-797 (2013
    • (2013) ACS Nano , vol.7 , pp. 791-797
    • Zhao, W.1
  • 71
    • 84879628030 scopus 로고    scopus 로고
    • Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten Dichalcogenides
    • Zeng, H. et al. Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten Dichalcogenides. Sci. Rep. 3, 1608 (2013
    • (2013) Sci. Rep , vol.3 , pp. 1608
    • Zeng, H.1
  • 72
    • 84874522179 scopus 로고    scopus 로고
    • Electronic properties of the MoS2-WS2 heterojunction
    • Komider, K. &Fernández-Rossier, J. Electronic properties of the MoS2-WS2 heterojunction. Phys. Rev. B 87, 075451 (2013
    • (2013) Phys. Rev , vol.B 87 , pp. 075451
    • Komider, K.1    Fernández-Rossier, J.2
  • 73
    • 84880125373 scopus 로고    scopus 로고
    • Transport theory of monolayer transition-metal dichalcogenides through symmetry
    • Song, Y. &Dery, H. Transport Theory of Monolayer Transition-Metal Dichalcogenides through symmetry. Phys. Rev. Lett. 111, 026601 (2013
    • (2013) Phys. Rev. Lett , vol.111 , pp. 026601
    • Song, Y.1    Dery, H.2
  • 74
  • 75
    • 84867444488 scopus 로고    scopus 로고
    • Intrinsic spin Hall eect in monolayers of group-VI dichalcogenides: A first-principles study
    • Feng,W. et al. Intrinsic spin Hall eect in monolayers of group-VI dichalcogenides: A first-principles study. Phys. Rev. B 86, 165108 (2012
    • (2012) Phys. Rev , vol.B 86 , pp. 165108
    • Feng, W.1
  • 76
    • 84884585058 scopus 로고    scopus 로고
    • Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
    • Liu, G-B., Shan,W-Y., Yao, Y., Yao,W. &Xiao, D. Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides. Phys. Rev. B 88, 085433 (2013
    • (2013) Phys. Rev , vol.B 88 , pp. 085433
    • Liu, G.-B.1    Shan, W.-Y.2    Yao, Y.3    Yao, W.4    Xiao, D.5
  • 77
    • 84872029909 scopus 로고    scopus 로고
    • Intervalley scattering and localization behaviors of spin valley coupled Dirac fermions
    • Lu, H-Z., Yao,W., Xiao, D. &Shen, S-Q. Intervalley scattering and localization behaviors of spin valley coupled Dirac fermions. Phys. Rev. Lett. 110, 016806 (2013
    • (2013) Phys. Rev. Lett , vol.110 , pp. 016806
    • Lu Yao -Z H, W.1    Xiao, D.2    Shen, S.-Q.3
  • 78
    • 84879661182 scopus 로고    scopus 로고
    • Magnetoelectric eects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers
    • Gong, Z. et al. Magnetoelectric eects and valley-controlled spin quantum gates in transition metal dichalcogenide bilayers. Nature Commun. 4, 15 (2013
    • (2013) Nature Commun , vol.4 , pp. 15
    • Gong, Z.1
  • 79
    • 84895910311 scopus 로고    scopus 로고
    • Spin-layer locking eects in optical orientation of exciton spin in bilayerWSe2
    • Jones, A. M. et al. Spin-layer locking eects in optical orientation of exciton spin in bilayerWSe2. Nature Phys. 10, 130-134 (2014
    • (2014) Nature Phys , vol.10 , pp. 130-134
    • Jones, A.M.1
  • 80
    • 84883740963 scopus 로고    scopus 로고
    • Zeeman-Type spin splitting controlled by an electric field
    • Yuan, H. et al. Zeeman-Type spin splitting controlled by an electric field. Nature Phys. 9, 563-569 (2013
    • (2013) Nature Phys , vol.9 , pp. 563-569
    • Yuan, H.1
  • 81
    • 84887844004 scopus 로고    scopus 로고
    • Origin of indirect optical transitions in few-layer MoS2,WS2, andWSe2
    • Zhao,W. et al. Origin of indirect optical transitions in few-layer MoS2,WS2, andWSe2. Nano Lett. 13, 5627-5634 (2013
    • (2013) Nano Lett , vol.13 , pp. 5627-5634
    • Zhao, W.1
  • 82
    • 84878237613 scopus 로고    scopus 로고
    • Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
    • Van Der Zande, A. M. et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nature Mater. 12, 554-561 (2013
    • (2013) Nature Mater , vol.12 , pp. 554-561
    • Van Der Zande, A.M.1
  • 83
    • 1842377449 scopus 로고    scopus 로고
    • Room-Temperature spin memory in two-dimensional electron gases
    • Kikkawa, J. M. Room-Temperature spin memory in two-dimensional electron gases. Science 277, 1284-1287 (1997
    • (1997) Science , vol.277 , pp. 1284-1287
    • Kikkawa, J.M.1
  • 84
    • 0035968004 scopus 로고    scopus 로고
    • Ultrafast manipulation of electron spin coherence
    • Gupta, J. A., Knobel, R., Samarth, N. &Awschalom, D. D. Ultrafast manipulation of electron spin coherence. Science 292, 2458-2461 (2001
    • (2001) Science , vol.292 , pp. 2458-2461
    • Gupta, J.A.1    Knobel, R.2    Samarth, N.3    Awschalom, D.D.4
  • 86
    • 84873442353 scopus 로고    scopus 로고
    • Unconventional quantum Hall eect and tunable spin Hall eect in Dirac materials: Application to an isolated MoS2 trilayer
    • Li, X., Zhang, F. &Niu, Q. Unconventional quantum Hall eect and tunable spin Hall eect in Dirac materials: Application to an isolated MoS2 trilayer. Phys. Rev. Lett. 110, 066803 (2013
    • (2013) Phys. Rev. Lett , vol.110 , pp. 066803
    • Li, X.1    Zhang, F.2    Niu, Q.3
  • 87
    • 84859795935 scopus 로고    scopus 로고
    • Designing electrical contacts to MoS2 monolayers: A computational Study
    • Popov, I., Seifert, G. &Tománek, D. Designing electrical contacts to MoS2 monolayers: A computational Study. Phys. Rev. Lett. 108, 156802 (2012
    • (2012) Phys. Rev. Lett , vol.108 , pp. 156802
    • Popov, I.1    Seifert, G.2    Tománek, D.3
  • 88
    • 84883179670 scopus 로고    scopus 로고
    • Mobility engineering and a metal-insulator transition in monolayer MoS2
    • Radisavljevic, B. &Kis, A. Mobility engineering and a metal-insulator transition in monolayer MoS2. Nature Mater. 12, 815-820 (2013
    • (2013) Nature Mater , vol.12 , pp. 815-820
    • Radisavljevic, B.1    Kis, A.2
  • 89
    • 84872115141 scopus 로고    scopus 로고
    • High performance multilayer MoS2 transistors with scandium contacts
    • Das, S., Chen, H-Y., Penumatcha, A. V. &Appenzeller, J. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett. 13, 100-105 (2013
    • (2013) Nano Lett , vol.13 , pp. 100-105
    • Das, S.1    Chen, H.-Y.2    Penumatcha, A.V.3    Appenzeller, J.4
  • 90
    • 84863855836 scopus 로고    scopus 로고
    • High-performance single layeredWSe2 p-FETs with chemically doped contacts
    • Fang, H. et al. High-performance single layeredWSe2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788-3792 (2012
    • (2012) Nano Lett , vol.12 , pp. 3788-3792
    • Fang, H.1
  • 91
    • 84884215670 scopus 로고    scopus 로고
    • Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2
    • Baugher, B.W. H., Churchill, H. O. H., Yang, Y. &Jarillo-Herrero, P. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett. 13, 4212-4216 (2013
    • (2013) NapagLett , vol.13 , pp. 4212-4216
    • Baugher, B.W.H.1    Churchill, H.O.H.2    Yang, Y.3    Jarillo-Herrero, P.4
  • 92
    • 84881167566 scopus 로고    scopus 로고
    • Van der waals heterostructures
    • Geim, A. K. &Grigorieva, I. V. Van DerWaals heterostructures. Nature 499, 419-425 (2013
    • (2013) Nature , vol.499 , pp. 419-425
    • Geim, A.K.1    Grigorieva, I.V.2
  • 93
    • 84883424606 scopus 로고    scopus 로고
    • Spintronics in MoS2 monolayer quantum wires
    • Klinovaja, J. &Loss, D. Spintronics in MoS2 monolayer quantum wires. Phys. Rev. B 88, 075404 (2013.
    • (2013) Phys. Rev , vol.B 88 , pp. 075404
    • Klinovaja, J.1    Loss, D.2


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