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Journal of Electronic Materials

Volumn 43, Issue 12, 2014, Pages 4560-4568

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

(3) Eller, Brianna S a Yang, Jialing a Nemanich, Robert J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

AlGaN; band bending; GaN; polarization; surface states

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC CURRENT MEASUREMENT; GALLIUM NITRIDE; PHOTOELECTRON SPECTROSCOPY; POLARIZATION; SEMICONDUCTOR ALLOYS; SURFACE STATES;

ALGAN; BANDBENDING; ELECTRONIC SURFACE STATE; FERMI LEVEL PINNING; POLARIZATION CHARGES; POLARIZATION EFFECT; SURFACE BAND BENDING; X RAY PHOTOEMISSION SPECTROSCOPY;

III-V SEMICONDUCTORS;

EID: 84919949410 PISSN: 03615235 EISSN: 1543186X Source Type: Journal
DOI: 10.1007/s11664-014-3383-z Document Type: Article

Times cited : (53)

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