Band alignment and performance improvement mechanisms of chlorine-treated ZnO-gate AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3869-3875

  Chiou, Ya Lan ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Band offset; chlorine surface treatment; low frequency noise; vapor cooling condensation system; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ALGAN; ALGAN/GAN; BAND ALIGNMENTS; BAND OFFSETS; CONDUCTION BAND OFFSET; DIRECT CURRENT; GAIN CUTOFF FREQUENCY; GATE DIELECTRIC LAYERS; GATE-SOURCE VOLTAGE; HIGH QUALITY; LOW-FREQUENCY NOISE; MAXIMUM FREQUENCY OF OSCILLATIONS; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON MOBILITY TRANSISTORS; N VACANCY; PERFORMANCE IMPROVEMENTS; PULSED OUTPUT; SURFACE STATE DENSITY; VALENCE-BAND OFFSET; X-RAY PHOTOELECTRON SPECTROSCOPY (XPS); ZNO;

CHLORINE; CONDENSATION; CUTOFF FREQUENCY; DANGLING BONDS; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; GATES (TRANSISTOR); METALLIC FILMS; PASSIVATION; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SURFACE TREATMENT; VAPORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80054889027     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2163721     Document Type: Article

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