In situ atomic layer deposition study of HfO2 growth on NH 4OH and atomic hydrogen treated Al0.25Ga0.75N

Journal of Applied Physics

Volumn 113, Issue 24, 2013, Pages

  Qin, Xiaoye ^a   Brennan, Barry ^a   Dong, Hong ^a   Kim, Jiyoung ^a   Hinkle, Christopher L ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; CHEMICAL STATE; DEPOSITION PROCESS; HALF CYCLE; INTERFACIAL OXIDES; NATIVE OXIDES; SITU X-RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM; ATOMS; DEPOSITION; GALLIUM; HAFNIUM OXIDES; HYDROGEN; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION;

EID: 84879871263     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812243     Document Type: Article

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