Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach

Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

  Pela R R ^a   Caetano, C ^b   Marques, M ^a   Ferreira, L G ^a,c   Furthmuller J ^d   Teles, L K ^a  

^a INSTITUTO TECNOLÓGICO DE AERONÁUTICA   (Brazil)

^b UNIVERSIDADE FEDERAL DA FRONTEIRA SUL   (Brazil)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

^d FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BAND GAPS; BOWING PARAMETERS; FIRST-PRINCIPLES CALCULATION; QUASI-CHEMICAL;

COMPOSITION EFFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM COMPOUNDS;

CALCULATIONS;

EID: 79954577805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3576570     Document Type: Article

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