XPS analysis of AlGaN/GaN surface after chemical and n-containing plasma treatments

ECS Transactions

Volumn 50, Issue 3, 2013, Pages 451-460

  Meunier, R ^a   Torres, A ^a   Charles, M ^a   Morvan, E ^a   Petit Etienne, C ^b   Renault, O ^a   Billon, T ^a  

^a CEA LETI   (France)

^b MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ALUMINUM OXIDE; AMMONIUM HYDROXIDE; CHEMICAL ANALYSIS; III-V SEMICONDUCTORS; NITRIDES; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN/GAN HETEROSTRUCTURES; CARBON CONTAMINATION; CHEMICAL TREATMENTS; DETECTION LIMITS; FORMING GAS; PLASMA TREATMENT; SURFACE OXIDE; XPS ANALYSIS;

GALLIUM NITRIDE;

EID: 84885755756     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05003.0451ecst     Document Type: Conference Paper

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