Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN

Applied Physics Letters

Volumn 103, Issue 22, 2013, Pages

  Qin, Xiaoye ^a   Dong, Hong ^a   Brennan, Barry ^a   Azacatl, Angelica ^a   Kim, Jiyoung ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; FORMING GAS; INTERFACIAL CHARACTERISTICS; LOW ENERGY ION SCATTERING SPECTROSCOPY; PLASMA TREATMENT; SITU X-RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM; ATOMIC LAYER DEPOSITION; GALLIUM; PHOTOELECTRONS; PLASMAS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHASE INTERFACES;

EID: 84888620940     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4833836     Document Type: Article

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