Presence and origin of interface charges at atomic-layer deposited Al 2O3/III-nitride heterojunctions

Applied Physics Letters

Volumn 99, Issue 19, 2011, Pages

  Ganguly, Satyaki ^a   Verma, Jai ^a   Li, Guowang ^a   Zimmermann, Tom ^a   Xing, Huili ^a   Jena, Debdeep ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; CAPACITANCE VOLTAGE MEASUREMENTS; DEVICE APPLICATION; II-IV SEMICONDUCTORS; III-NITRIDES; INTERFACE CHARGE; PIEZOELECTRIC POLARIZATIONS; POLARIZATION CHARGES; SCALING PROPERTIES;

HETEROJUNCTIONS; NITRIDES; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS; VANADIUM;

INTERFACES (MATERIALS);

EID: 81155125066     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3658450     Document Type: Article

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