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Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

(5) Yang, Jialing a Eller, Brianna S a Zhu, Chiyu a England, Chris a Nemanich, Robert J a

a ARIZONA STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; BAND ALIGNMENTS; BANDBENDING; CHARGE NEUTRALITY LEVEL; CLEANING PROCESS; CONDUCTION BAND OFFSET; HIGH-K DIELECTRIC; HIGH-K OXIDES; IN-SITU; INTERFACIAL PASSIVATION LAYERS; ORGANICS; OXYGEN-TERMINATED SURFACES; PLASMA CLEANING; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; RESIDUAL CARBON; STACKED STRUCTURE; THEORETICAL CALCULATIONS; ULTRAVIOLET PHOTOEMISSION SPECTROSCOPY; VALENCE BAND OFFSETS;

ALUMINUM; ATOMIC LAYER DEPOSITION; CLEANING; HAFNIUM OXIDES; HETEROJUNCTIONS; OXIDE FILMS; OXYGEN; PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 84866346273 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4749268 Document Type: Conference Paper

Times cited : (71)

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