Energy dependence of electron inelastic mean free paths in bulk GaN crystals

Surface Science

Volumn 566-568, Issue 1-3 PART 2, 2004, Pages 1234-1239

  Krawczyk, M ^a   Zommer, L ^a   Jablonski, A ^a   Grzegory, I ^b   Bockowski, M ^b  

^a INSTITUTE OF PHYSICAL CHEMISTRY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Auger electron spectroscopy; Electron solid interactions; Gallium nitride; Ion bombardment; Low index single crystal surfaces; Monte Carlo simulations; X ray photoelectron spectroscopy

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRONS; GALLIUM NITRIDE; ION BOMBARDMENT; MONTE CARLO METHODS; ORGANIC COMPOUNDS; SENSORS; STOICHIOMETRY; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON TRANSPORT PROCESS; ELECTRON-SOLID INTERACTIONS; ENERGY DEPENDENCE; LOW INDEX SINGLE CRYSTAL SURFACES;

CRYSTALS;

EID: 4544359501     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.098     Document Type: Article

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