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Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

Surface states and origin of the Fermi level pinning on nonpolar GaN (11-̄00) surfaces

(6) Ivanova, L a Borisova, S b Eisele, H a Dahne M a Laubsch, A c Ebert, Ph b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

c OSRAM OPTO SEMICONDUCTORS GMBH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSCOPIC EXAMINATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM;

BAND EDGES; BOND SURFACES; CLEAVAGE SURFACES; CONDUCTION BAND EDGES; FUNDAMENTAL BAND GAPS; INTRINSIC SURFACES; NONPOLAR GAN; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPIES; SURFACE BRILLOUIN ZONES; SURFACE STATES;

HETEROJUNCTIONS;

EID: 56249113777 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3026743 Document Type: Article

Times cited : (52)

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