Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix

Journal of Nanoparticle Research

Volumn 14, Issue 7, 2012, Pages

  Stavarache, Ionel ^a   Lepadatu, Ana Maria ^a   Maraloiu, Adrian V ^a   Teodorescu, Valentin S ^a   Ciurea, Magdalena Lidia ^a  

^a NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Conduction mechanisms; Electron irradiation; Magnetron sputtering; Nanoparticles; Nanostructures; TEM

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON IRRADIATION; ENERGY DISPERSIVE SPECTROSCOPY; GERMANIUM; MAGNETRON SPUTTERING; NANOPARTICLES; NANOSTRUCTURES; SILICA; SILICON; SIO2 NANOPARTICLES; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

ARRHENIUS DEPENDENCE; CHARGE EXCITATIONS; CONDUCTION MECHANISM; CONVENTIONAL TRANSMISSION ELECTRON MICROSCOPIES; ELECTRICAL BEHAVIORS; ELECTRICAL TRANSPORT; ENERGY DISPERSIVE X RAY SPECTROSCOPY; RF-MAGNETRON SPUTTERING;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM; NANOFILM; NANOPARTICLE; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; ELECTRON TRANSPORT; ENERGY; EXCITATION; HIGH TEMPERATURE; LOW TEMPERATURE; PRIORITY JOURNAL;

EID: 84865765631     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-012-0930-5     Document Type: Article

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