Single electron tunneling and Coulomb blockade effect in HfAlOAu nanocrystals/HfAlO trilayer nonvolatile memory structure

Applied Physics Letters

Volumn 92, Issue 14, 2008, Pages

  Chan, K C ^a   Lee, P F ^a   Dai, J Y ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRIC CURRENTS; ELECTRON TUNNELING; HAFNIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; NONVOLATILE STORAGE;

FLOATING GATE MEMORY; NONVOLATILE MEMORY STRUCTURE; SINGLE ELECTRON DEVICES;

NANOCRYSTALS;

EID: 42149133683     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908961     Document Type: Article

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