Determination of the Fowler-Nordheim tunneling parameters from the Fowler-Nordheim plot

Solid-State Electronics

Volumn 45, Issue 10, 2001, Pages 1787-1791

  Chiou, Y L ^a   Gambino, J P ^b   Mohammad, M ^a  

^a University of South Florida   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Fowler Nordheim tunneling; MOS capacitors; Thin gate oxides

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC FILMS; GATES (TRANSISTOR);

THIN GATE OXIDES;

MOS CAPACITORS;

EID: 0035478005     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00190-3     Document Type: Article

References (15)

1. 2
2. Electrical construction and dielectric breakdown in silicon dioxide films on silicon
3. Tunneling in thin MOS structures
4. 2 films
5. 2
6. Differential studies of dual-dielectric charge-storage cells
7. 2 interface
8. 2-Al structures
9. On tunneling in metal-oxide-silicon structure
10. Measurement of Fowler-Nordheim tunneling currents in MOS structures under charge trapping conditions
11. + polycrystalline Si metal-oxide-silicon structure
12. 2 barrier height from the Fowler-Nordheim plot
13. Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
14. Modeled tunnel currents for high dielectric constant dielectrics